Very Low Power CMOS SRAM
1M X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616LV1611
n
FEATURES
Ÿ
Wide V
C C
operation voltage : 2.4V ~ 5.5V
Ÿ
Very low power consumption :
V
CC
= 3.0V
Operation current : 46mA (Max.) at 55ns
2mA (Max.) at 1MHz
O
Standby current :
1.5uA (Typ.) at 25 C
V
CC
= 5.0V
Operation current : 115mA (Max.) at 55ns
10mA (Max.) at 1MHz
O
Standby current :
6.0uA (Typ.) at 25 C
Ÿ
High speed access time :
-55
55ns(Max.) at V
CC
=3.0~5.5V
-70
70ns(Max.) at V
CC
=2.7~5.5V
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE2, CE1 and OE options
Ÿ
I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation, no clock, no refresh
Ÿ
Data retention supply voltage as low as 1.5V
n
DESCRIPTION
The BS616LV1611 is a high performance, very low power CMOS
Static Random Access Memory organized as 1,048,576 by 16 bits
and operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 1.5uA at 3.0V/25
O
C and maximum access time of 55ns at
3.0V/125
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE1), active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BS616LV1611 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV1611 is available in 48-pin TSOP Type I package and
48-ball BGA package.
n
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS616LV1611FA
BS616LV1611TA
OPERATING
TEMPERATURE
Automotive
Grade
O
O
-40 C to +125 C
STANDBY
(I
C CS B1
, Typ.)
(I
CCSB 1
, Ma x)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=5.0V V
CC
=3.0V V
CC
=5.0V V
CC
=3.0V
V
CC
=5.0V
1MHz
f
M ax.
V
CC
=3.0V
1MHz
f
Max.
BGA-48-0912
6.0uA
1.5uA
220uA
120uA
10mA
115mA
2mA
46mA
TSOP I-48
n
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE1
DQ0
DQ1
DQ2
DQ3
VC C
NC
VSS
DQ4
DQ5
DQ6
DQ7
A19
WE
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
1
A
B
C
D
E
F
G
H
LB
D8
D9
VSS
VC C
D14
D15
A18
2
OE
UB
D10
D11
D12
D13
A19
A8
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
6
CE2
D0
D2
VCC
VSS
D6
D7
NC
A5
A6
A7
OE
UB
LB
CE2
NC
D Q15
D Q14
D Q13
D Q12
VSS
VCC
D Q11
D Q10
D Q9
D Q8
A8
A9
A10
A11
A12
A13
n
BLOCK DIAGRAM
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
Address
Input
Buffer
10
Row
Decoder
1024
Mem ory Arra y
1024 x 16384
BH616LV1611TC
BH616LV1611TI
16384
D Q0
.
.
.
.
.
.
DQ15
CE2
CE1
WE
OE
UB
LB
V
CC
V
SS
.
.
.
.
.
.
16
D ata
Input
Buffer
D ata
Output
Buffer
16
1024
Column Decoder
10
Address Input Buffer
Control
16
Column I/O
Write D river
Sense Am p
16
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE1
D1
D3
D4
D5
WE
A11
A14 A15 A16 A17 A18 A0 A1 A2 A3 A19
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS616LV1611A
1
Revision 2.2A
Mar.
2006
BS616LV1611
n
PIN DESCRIPTIONS
Name
A0-A19 Address Input
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
Function
These 20 address inputs select one of the 1,048,576 x 16 bit in the RAM
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read form or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
Lower byte and upper byte data input/output control pins.
LB and UB Data Byte Control Input
DQ0-DQ15 Data Input/Output
Ports
V
CC
V
SS
16 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
n
TRUTH TABLE
MODE
Chip De-selected
(Power Down)
CE1
H
X
X
L
CE2
X
L
X
H
H
WE
X
X
X
H
H
OE
X
X
X
H
H
LB
X
X
H
L
X
L
UB
X
X
H
X
L
L
L
H
L
L
H
DQ0~DQ7 DQ8~DQ15 V
CC
CURRENT
High Z
High Z
High Z
High Z
High Z
D
OUT
High Z
D
OUT
D
IN
X
D
IN
High Z
High Z
High Z
High Z
High Z
D
OUT
D
OUT
High Z
D
IN
D
IN
X
I
CCSB
, I
CCSB1
I
CCSB
, I
CCSB1
I
CCSB
, I
CCSB1
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
Output Disabled
L
Read
L
H
H
L
H
L
L
Write
L
H
L
X
H
L
NOTES: H means V
IH
; L means V
IL
; X means don’t care (Must be V
IH
or V
IL
state)
R0201-BS616LV1611A
2
Revision 2.2A
Mar.
2006
BS616LV1611
n
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
(1)
n
OPERATING RANGE
UNITS
V
O
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
RATING
-0.5
(2)
to 7.0
-40 to +125
-60 to +150
1.0
20
RANG
Automotive
AMBIENT
TEMPERATURE
-40 C to + 125 C
O
O
V
CC
2.4V ~ 5.5V
C
C
O
n
CAPACITANCE
(1)
(T
A
= 25 C, f = 1.0MHz)
O
W
mA
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
C
IN
C
IO
Input
Capacitance
Input/Output
Capacitance
V
IN
= 0V
V
I/O
= 0V
6
8
pF
pF
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2.
–2.0V
in case of AC pulse width less than 30 ns.
1. This parameter is guaranteed and not 100% tested.
n
DC ELECTRICAL CHARACTERISTICS (T
A
= -40 C to +125 C)
PARAMETER
NAME
V
CC
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
I
CC1
I
CCSB
I
CCSB1
PARAMETER
Power Supply
O
O
TEST CONDITIONS
MIN.
2.4
(2)
TYP.
(1)
--
MAX.
5.5
UNITS
V
Input Low Voltage
-0.5
--
0.8
(3)
V
Input High Voltage
V
IN
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
Output Leakage Current
V
I/O
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
or OE = V
IH
Output Low Voltage
V
C C
= Max, I
OL
= 2.0mA
2.2
--
V
CC
+0.3
V
Input Leakage Current
--
--
1
uA
--
--
1
uA
--
--
0.4
V
Output High Voltage
Operating Power Supply
Current
Operating Power Supply
Current
Standby Current
–
TTL
V
C C
= Min, I
OH
= -1 .0mA
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f =
(4)
F
MAX
2.4
V
CC
=3.0V
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
--
--
46
115
V
--
--
mA
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f = 1MHz
CE1 = V
IH
, or CE2 = V
IL
,
I
DQ
= 0mA
CE1
≧
V
CC
-0.2V or CE2
≦
0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
--
--
2
10
mA
--
--
1.5
6.0
1.0
2.0
mA
Standby Current
–
CMOS
O
--
120
220
uA
1. Typical characteristics are at T
A
=25 C and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: V
CC
+1.0V in case of pulse width less than 20 ns.
4. F
MAX
=1/t
RC.
R0201-BS616LV1611A
3
Revision 2.2A
Mar.
2006
BS616LV1611
n
DATA RETENTION CHARACTERISTICS (T
A
= -40 C to +125 C)
SYMBOL
V
DR
I
CCDR
t
CDR
t
R
PARAMETER
V
CC
for Data Retention
O
O
TEST CONDITIONS
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧
V
CC
-0.2V or V
IN
≦
0.2V
MIN.
1.5
TYP.
(1)
--
MAX.
--
UNITS
V
Data Retention Current
Chip Deselect to Data
Retention Time
--
0.8
80
uA
0
See Retention Waveform
(2)
--
--
ns
Operation Recovery Time
O
t
RC
--
--
ns
1. V
CC
=1.5V, T
A
=25 C and not 100% tested.
2. t
RC
= Read Cycle Time.
n
LOW V
CC
DATA RETENTION WAVEFORM (1) (CE1 Controlled)
Data Retention Mode
V
DR
≧1.5V
V
CC
V
IH
V
CC
V
CC
t
C DR
CE1≧V
CC
- 0.2V
t
R
V
IH
CE1
n
LOW V
CC
DATA RETENTION WAVEFORM (2) (CE2 Controlled)
Data Retention Mode
V
CC
V
CC
V
DR
≧1.5V
V
CC
t
C DR
CE2≦0.2V
V
IL
t
R
CE2
V
IL
n
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing
Reference Level
Output Load
t
C LZ
, t
OLZ
, t
C HZ
, t
OHZ
, t
WH Z
Others
Vcc / 0V
1V/ns
0.5Vcc
C
L
= 5pF+1TTL
C
L
= 30pF+1TTL
ALL INPUT PULSES
1 TTL
Output
C
L
(1)
n
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
MUST BE
STEADY
MAY CHANGE
FROM
“H”
TO
“L”
MAY CHANGE
FROM
“L”
TO
“H”
DON’T CARE
ANY CHANGE
PERMITTED
DOES NOT
APPLY
OUTPUTS
MUST BE
STEADY
WILL BE CHANGE
FROM
“H”
TO
“L”
WILL BE CHANGE
FROM
“L”
TO
“H”
CHANGE :
STATE UNKNOW
CENTER LINE IS
HIGH INPEDANCE
“OFF”
STATE
V
CC
GND
10%
90%
90%
10%
→ ←
Rise Time:
1V/ns
→ ←
Fall Time:
1V/ns
1. Including jig and scope capacitance.
R0201-BS616LV1611A
4
Revision 2.2A
Mar.
2006
BS616LV1611
n
AC ELECTRICAL CHARACTERISTICS (T
A
= -40 C to +125 C)
READ CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
CYCLE TIME : 55ns
(V
CC
=3.0~5.5V)
MIN.
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output Low Z
Chip Select to Output High Z
Chip Select to Output High Z
(CE1)
(CE2)
(CE1)
(CE2)
(LB, UB)
(CE1)
(CE2)
(LB, UB)
55
--
--
--
--
--
10
10
10
5
--
--
--
--
10
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
--
55
55
55
55
30
--
--
--
--
30
30
30
25
--
CYCLE TIME : 70ns
(V
CC
=2.7~5.5V)
MIN.
70
--
--
--
--
--
10
10
10
5
--
--
--
--
10
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
--
70
70
70
70
35
--
--
--
--
35
35
35
30
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
O
O
DESCRIPTION
UNITS
t
AVAX
t
AVQX
t
ELQV1
t
ELQV2
t
BLQV
t
GLQV
t
ELQX1
t
ELQX2
t
BLQX
t
GLQX
t
EHQZ1
t
EHQZ2
t
BHQZ
t
GHQZ
t
AVQX
t
RC
t
AA
t
ACS1
t
ACS2
t
BA
t
OE
t
CLZ1
t
CLZ2
t
BE
t
OLZ
t
CHZ1
t
CHZ2
t
BDO
t
OHZ
t
OH
Data Byte Control to Output High Z (LB, UB)
Output Enable to Output High Z
Data Hold from Address Change
n
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
t
RC
ADDRESS
t
OH
D
OUT
t
AA
t
OH
R0201-BS616LV1611A
5
Revision 2.2A
Mar.
2006
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