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BS616UV1010EIP15

Description
Standard SRAM, 64KX16, 150ns, CMOS, PDSO44, TSOP2-44
Categorystorage    storage   
File Size259KB,9 Pages
ManufacturerBrilliance
Environmental Compliance  
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BS616UV1010EIP15 Overview

Standard SRAM, 64KX16, 150ns, CMOS, PDSO44, TSOP2-44

BS616UV1010EIP15 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionTSOP2, TSOP44,.46,32
Reach Compliance Codeunknown
Maximum access time150 ns
Other featuresIT ALSO OPERATES AT 3.0 NOMINAL SUPPLY VOLTAGE
Spare memory width8
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
length18.41 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals44
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2/3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Minimum standby current1.5 V
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1
BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM
64K X 16 bit
BS616UV1010
DESCRIPTION
The BS616UV1010 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 65,536 words by 16 bits and
operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.01uA and maximum access time of 150ns in 2V operation.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable(OE) and three-state output drivers.
The BS616UV1010 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV1010 is available in the JEDEC standard 44-pin TSOP
Type II and 48-pin mini-BGA.
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
Vcc = 2.0V
C-grade : 10mA (Max.) operating current
I- grade : 15mA (Max.) operating current
0.01uA (Typ.) CMOS standby current
Vcc = 3.0V
C-grade : 15mA (Max.) operating current
I- grade : 20mA (Max.) operating current
0.02uA (Typ.) CMOS standby current
• High speed access time :
-15
150ns (Max.) at Vcc = 3.0V
• Input levels are CMOS-compatible
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
PRODUCT FAMILY
PRODUCT
FAMILY
BS616UV1010EC
BS616UV1010AC
BS616UV1010EI
BS616UV1010AI
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
(ns)
Vcc=3.0V
POWER DISSIPATION
STANDBY
Operating
(I
CCSB1
, Max)
(I
CC
, Max)
PKG TYPE
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
+0 C to +70 C
O
O
O
O
1.8V ~ 3.6V
150
0.5uA
0.3uA
15mA
10mA
TSOP2-44
BGA-48-0608
TSOP2-44
BGA-48-0608
-40 C to +85 C
1.8V ~ 3.6V
150
1.5uA
1uA
20mA
15mA
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
6
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
BLOCK DIAGRAM
A8
A13
A15
A14
A12
A7
A6
A5
A4
Address
Input
Buffer
18
Row
Decoder
512
Memory Array
512 x 2048
BS616UV1010EC
BS616UV1010EI
2048
DQ0
16
Data
Input
Buffer
16
Column I/O
2
3
4
5
A
LB
OE
A0
A1
A2
NC
.
.
.
.
DQ15
.
.
.
.
Write Driver
Sense Amp
128
Column Decoder
16
Data
Output
16
Buffer
B
IO8
UB
A3
A4
CE
IO0
C
IO9
IO10
A5
A6
IO1
IO2
CE
WE
OE
UB
LB
Control
14
Address Input Buffer
D
VSS
IO11
NC
A7
IO3
VCC
E
VCC
IO12
NC
NC
IO4
VSS
A11 A9 A3 A2 A1 A0 A10
F
IO14
IO13
A14
A15
IO5
IO6
Vcc
Gnd
G
IO15
NC
A12
A13
WE
IO7
H
NC
A8
A9
A10
A11
NC
Brilliance Semiconductor, Inc
.
reserves the right to modify document contents without notice.
R0201-BS616UV1010
1
Revision 2.3
Jan.
2004

BS616UV1010EIP15 Related Products

BS616UV1010EIP15 BS616UV1010AIP15 BS616UV1010AI15 BS616UV1010AC15
Description Standard SRAM, 64KX16, 150ns, CMOS, PDSO44, TSOP2-44 Standard SRAM, 64KX16, 150ns, CMOS, PBGA48, MINIBGA-48 Standard SRAM, 64KX16, 150ns, CMOS, PBGA48 Standard SRAM, 64KX16, 150ns, CMOS, PBGA48
Is it lead-free? Lead free Lead free Contains lead Contains lead
Is it Rohs certified? conform to conform to incompatible incompatible
package instruction TSOP2, TSOP44,.46,32 LFBGA, BGA48,6X8,30 FBGA, BGA48,6X8,30 FBGA, BGA48,6X8,30
Reach Compliance Code unknown unknown unknown unknown
Maximum access time 150 ns 150 ns 150 ns 150 ns
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-PDSO-G44 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 16 16 16
Humidity sensitivity level 3 3 3 3
Number of terminals 44 48 48 48
word count 65536 words 65536 words 65536 words 65536 words
character code 64000 64000 64000 64000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 70 °C
Minimum operating temperature -40 °C -40 °C -40 °C -
organize 64KX16 64KX16 64KX16 64KX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 LFBGA FBGA FBGA
Encapsulate equivalent code TSOP44,.46,32 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 240 240
power supply 2/3.3 V 2/3.3 V 2/3.3 V 2/3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Minimum standby current 1.5 V 1.5 V 1.5 V 1.5 V
Maximum slew rate 0.02 mA 0.02 mA 0.02 mA 0.015 mA
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL
Terminal form GULL WING BALL BALL BALL
Terminal pitch 0.8 mm 0.75 mm 0.75 mm 0.75 mm
Terminal location DUAL BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1
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