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BS616LV1613FCG55

Description
Standard SRAM, 1MX16, 55ns, CMOS, PBGA48, MINIBGA-48
Categorystorage    storage   
File Size252KB,8 Pages
ManufacturerBrilliance
Environmental Compliance
Download Datasheet Parametric View All

BS616LV1613FCG55 Overview

Standard SRAM, 1MX16, 55ns, CMOS, PBGA48, MINIBGA-48

BS616LV1613FCG55 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionLFBGA, BGA48,6X8,30
Reach Compliance Codeunknown
Maximum access time55 ns
Spare memory width8
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length12 mm
memory density16777216 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/SerialPARALLEL
power supply3/3.3 V
Certification statusNot Qualified
Maximum seat height1.4 mm
Minimum standby current1.5 V
Maximum slew rate0.045 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn95.5Ag3.8Cu0.7)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
width9 mm
Base Number Matches1
BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
1M X 16 bit
(Dual CE Pins)
DESCRIPTION
BS616LV1613
• Vcc operation voltage :
2.7~3.6V
• Very low power consumption :
Vcc
= 3.0V
C-grade: 45mA (@55ns) operating current
I -grade: 46mA (@55ns) operating current
C-grade: 36mA (@70ns) operating current
I -grade: 37mA (@70ns) operating current
3.0uA (Typ.)
CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2,CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
The BS616LV1613 is a high performance, very low power CMOS Static
Random Access Memory organized as 1,048,576 words by 16 bits and
operates from a range of
2.7V to 3.6V
supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of
3.0uA
at
3.0V/25
o
C
and maximum access time of 55ns at
3.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable(CE1)
, active HIGH chip enable (CE2), active LOW output enable(OE) and
three-state output drivers.
The BS616LV1613 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV1613 is available in 48-pin BGA package.
PRODUCT FAMILY
PRODUCT FAMILY
OPERATING
TEMPERATURE
+0
O
C to +70
O
C
-40
O
C to +85
O
C
Vcc
RANGE
2.7V ~ 3.6V
2.7V ~ 3.6V
SPEED
(ns)
55ns : 3.0~3.6V
70ns : 2.7~3.6V
POWER DISSIPATION
STANDBY
Operating
(I
CCSB1
, Max)
(I
CC
, Max)
PKG TYPE
Vcc=3V
Vcc=3V
55ns
Vcc=3V
70ns
BS616LV1613FC
BS616LV1613FI
55 / 70
55 / 70
10 uA
20 uA
45mA
46mA
36mA
37mA
BGA-48-0912
BGA-48-0912
PIN CONFIGURATIONS
1
A
B
C
D
E
F
G
H
LB
D8
D9
VSS
2
OE
UB
D10
D11
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE1
D1
D3
D4
D5
WE
A11
6
CE2
D0
D2
VCC
VSS
D6
D7
NC
BLOCK DIAGRAM
A4
A3
A2
A1
A0
A17
A16
A15
A14
A13
A12
Address
Input
Buffer
22
Row
Decoder
2048
Memory Array
2048 x 8192
8192
D0
16
Data
Input
Buffer
16
Column I/O
VCC
D14
D15
A 18
D12
D13
A19
.
A8
.
.
.
.
D15
CE2
CE1
WE
OE
UB
LB
Vcc
Vss
.
.
.
.
Write Driver
Sense Amp
512
Column Decoder
16
Data
Output
16
Buffer
18
Control
Address Input Buffer
A11 A10 A9 A8 A7 A6 A5 A18 A19
48-Ball CSP top View
Brilliance Semiconductor, Inc
. reserves the right to modify document contents without notice.
R0201-BS616LV1613
1
Revision 1.1
Jan.
2004
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