BDX14AR1 datasheet, PDF - EEWORLD Datasheet

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BDX14AR1: DescriptionPower Bipolar Transistor, 4A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size78KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BDX14AR1 Overview

Power Bipolar Transistor, 4A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin

BDX14AR1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	55 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-66
JESD-30 code	O-MBFM-P2
JESD-609 code	e1
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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PNP EPITAXIAL

SILICON TRANSISTOR

BDX14A

•

Hermetic Metal TO66 Package.

Ideal for General Purpose Low Frequency Switching Applications

Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VCBO

VCEO

VCER

VCEX

VEBO

IC

IB

PD

TJ

Tstg

Collector – Base Voltage

Collector – Emitter Voltage

RBE = 100Ω

Collector – Emitter Voltage

VBE = +1.5V

Collector – Base Voltage

Emitter – Base Voltage

Collector Current

Base Current

TC = 25°C

Total Power Dissipation at

De-rate Linearly Above 25°C

Junction Temperature Range

Storage Temperature Range

-90V

-55V

-60V

-90V

-7V

-4A

-2A

25W

0.142 W/°C

-55 to +200°C

-65 to +200°C

THERMAL PROPERTIES

Symbols

R

θJC

Parameters

Thermal Resistance, Junction To Case

Max.

7

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 10233

Issue 1

Page 1 of 3

Website:

http://www.semelab-tt.com

BDX14AR1 Related Products

	BDX14AR1	BDX14A	BDX14A.MOD	BDX14A.MODR1
Description	Power Bipolar Transistor, 4A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin	Power Bipolar Transistor, 4A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin,	Power Bipolar Transistor, 4A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin	Power Bipolar Transistor, 4A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin
Is it Rohs certified?	conform to	incompatible	incompatible	conform to
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	4 A	4 A	4 A	4 A
Collector-emitter maximum voltage	55 V	55 V	55 V	55 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	25	25	25
JEDEC-95 code	TO-66	TO-66	TO-66	TO-66
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	4 MHz	4 MHz	4 MHz
package instruction	FLANGE MOUNT, O-MBFM-P2	-	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Base Number Matches	1	1	1	-

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