BFC60 datasheet, PDF - EEWORLD Datasheet

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BFC60: DescriptionPower Field-Effect Transistor, 0.1A I(D), 1500V, 140ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size13KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BFC60 Overview

Power Field-Effect Transistor, 0.1A I(D), 1500V, 140ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

BFC60 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Minimum drain-source breakdown voltage	1500 V
Maximum drain current (ID)	0.1 A
Maximum drain-source on-resistance	140 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	0.2 A
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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LAB

TO220–AC Package Outline.

Dimensions in mm (inches)

10.67 (0.420)

9.65 (0.380)

SEME

BFC60

16.51 (0.650)

14.22 (0.560)

6.86 (0.270)

5.84 (0.230)

5.33 (0.210)

4.83 (0.190)

1.40 (0.020)

0.51 (0.055)

3.05 (0.120)

2.54 (1.000)

3.73 (0.147)

3.53 (0.139) Dia.

4.83 (0.190)

3.56 (0.140)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

ISOLATED

POWER MOSFETS

DSS

D(cont)

DS(on)

1500V

0.1A

140

1 2 3

14.73 (0.580)

12.70 (0.500)

6.35 (0.250)

4.60 (0.181)

1.78 (0.070)

0.99 (0.390)

2.54 (0.100)

N o m.

5.08 (0.200)

N o m.

1.02 (0.040)

0.38 (0.015)

0.66 (0.026)

0.41 (0.016)

2.92 (0.115)

2.03 (0.080)

Pin 1 – Gate

Pin 2 – Drain

Pin 3 – Source

ABSOLUTE MAXIMUM RATINGS

AMB

= 25°C unless otherwise stated)

DSS

, T

STG

Drain – Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate – Source Voltage

Total Power Dissipation

Operating and Storage Junction Temperature Range

1500

0.1

0.2

±20

–55 to +150

°C

ELECTRICAL CHARACTERISTICS

AMB

= 25°C unless otherwise stated)

DSS

DS(ON)

DSS

GSS

GS(off)

iss

oss

rss

off

Characteristic

Drain – Source Breakdown Voltage

Drain – Source On State Resistance

Zero Gate Voltage Drain Current

Gate – Source Leakage Current

Cutoff Voltage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn–on Time

Turn-off Time

Diode Forward Voltage

Forward Transfer Admittance

Test Conditions

= 0V , I

= 1mA

=10V , I

= 50mA

= 1200V , V

= 0V

= ±20V , V

= 0V

= 10V , I

= 1.0mA

= 20V

f = 1MHz

= 10V

= 50mA

= 0 , I

= 0.1A

= 20V , I

= 50mA

1.5

3.0

400

1.0

100

1.5

Prelim. 2/96

Min.

1500

Typ.

140

Max. Unit

200

100

±100

3.5

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

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