BDX 63, A, B, C
NPN SILICON DARLINGTONS
General purpose darlingtons designed for power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
Value
60
80
100
120
60
80
100
120
5.0
Unit
V
V
CEV
Collector-EmitterVoltage
V
BE
=-1.5 V
V
V
EBO
Emitter-Base Voltage
V
I
C(RMS)
I
C
Collector Current
8
A
12
I
CM
I
B
Base Current
0.15
A
P
T
Power Dissipation
@ T
C
= 25°
90
Watts
W/°C
T
J
T
S
Junction Temperature
Storage Temperature
-55 to +200
°C
COMSET SEMICONDUCTORS
1/4
BDX 63, A, B, C
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
BDX63
BDX63A
BDX63B
BDX63C
Value
1.94
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
BDX63
60
-
-
BDX63A
80
-
-
V
V
CEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
I
C
=0.1 A, I
B
=0, L=25mH
BDX63B
100
-
-
BDX63C
120
-
-
V
CE
=30 V
BDX63
-
-
V
CE
=40 V
BDX63A
-
-
0.5
mA
I
CEO
Collector Cutoff Current
V
CE
=50 V
BDX63B
-
-
V
CE
=60 V
BDX63C
-
-
COMSET SEMICONDUCTORS
2/4
BDX 63, A, B, C
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
I
EBO
Emitter Cutoff Current
V
BE
=5 V
BDX63
BDX63A
BDX63B
BDX63C
-
-
5.0
mA
V
CBO
=60 V
-
BDX63
-
0.2
V
CBO
=60 V
T
CASE
=150°C
-
-
2
V
CBO
=80 V
-
BDX63A
-
0.2
I
CBO
Collector-Base Cutoff
Current
V
CBO
=80 V
T
CASE
=150°C
-
-
2
mA
V
CBO
=100 V
-
BDX63B
-
0.2
V
CBO
=100 V
T
CASE
=150°C
-
-
2
V
CBO
=120 V
-
BDX63C
-
-
0.2
V
CBO
=120 V
T
CASE
=150°
-
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
2
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=3.0 A, I
B
=12 mA
-
-
2
V
V
F
Forward Voltage (pulse
method)
I
F
=3 A
-
1.8
-
V
V
BE
Base-Emitter Voltage (*)
I
C
=3.0 A, V
CE
=3V
-
-
2.5
V
F
h21e
Forward current transfer
ratio Cutoff frequency
V
CE
=3 V, I
C
=3 A
-
60
-
kHz
COMSET SEMICONDUCTORS
3/4
BDX 63, A, B, C
Symbol
Ratings
Test Condition(s)
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
Min Typ Mx Unit
f
T
Transition Frequency
V
CE
=3 V, I
C
=3 A, f=1 MHz
-
7
-
MHz
V
CE
=3 V, I
C
=0.5 A
-
1500
-
h
21E
Static forward current
transfer ratio (*)
V
CE
=3 V, I
C
=3 A
1000
-
-
-
V
CE
=3 V, I
C
=8 A
-
750
-
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
(1) collector-Emitter voltage limited et V
CEci
= V
rated by an auxiliary circuit
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
4,06
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
0,77
0,04
0,16
Base
Collector
Emitter
COMSET SEMICONDUCTORS
4/4
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