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BC373

Description
Small Signal Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size107KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BC373 Overview

Small Signal Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, TO-92

BC373 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
Maximum collector current (IC)1 A
Collector-based maximum capacity25 pF
ConfigurationDARLINGTON
Minimum DC current gain (hFE)8000
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment1.5 W
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max1.1 V
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC372/D
High Voltage
Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
BC372
BC373
1
2
EMITTER 1
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC372
100
100
12
1.0
625
5.0
1.5
12
–55 to +150
BC373
80
80
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watt
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 100
m
Adc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 V, IC = 0)
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle 2.0%.
BC372
BC373
IEBO
V(BR)CES
BC372
BC373
V(BR)CBO
BC372
BC373
V(BR)EBO
ICBO
100
100
100
nAdc
100
80
12
Vdc
nAdc
100
80
Vdc
Vdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
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