BD431 datasheet, PDF - EEWORLD Datasheet

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BD431: DescriptionPower Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size51KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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BD431 Overview

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

BD431 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz
Base Number Matches	1

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BD431 Related Products

	BD431	KSD180	KSC5035	KSC5036	KSC5034
Description	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin	RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-126	Power Bipolar Transistor, 0.15A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin	RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-126
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	4 A	3 A	0.3 A	0.15 A	0.5 A
Minimum DC current gain (hFE)	40	50	40	40	40
JEDEC-95 code	TO-126	TO-126	TO-126	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	3 MHz	50 MHz	500 MHz	80 MHz	800 MHz
ECCN code	EAR99	EAR99	-	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-
Collector-emitter maximum voltage	80 V	40 V	-	200 V	60 V
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE
Maker	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Maximum operating temperature	-	-	150 °C	150 °C	150 °C
Maximum power dissipation(Abs)	-	-	8 W	7 W	10 W

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