BC817/BC818
BC817/BC818
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC807/BC808
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
Collector Emitter Voltage
: BC817
: BC818
V
CEO
Collector Emitter Voltage
: BC817
: BC818
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
45
25
5
800
310
150
-65 ~ 150
V
V
V
mA
mW
°C
°C
50
30
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC817
: BC818
Collector-Emitter Breakdown Voltage
: BC817
: BC818
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=10mA, I
B
=0
Min.
45
25
I
C
=0.1mA, V
BE
=0
50
30
I
E
=0.1mA, I
C
=0
V
CE
=25V, V
BE
=0
V
EB
=4V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=300mA
V
CE
=5V, I
C
=10mA
f=50MHz
V
CB
=10V, f=1MHz
100
12
100
60
5
100
100
630
0.7
1.2
V
V
MHz
pF
V
V
V
nA
nA
Typ.
Max.
Units
V
V
BV
CES
BV
EBO
I
CES
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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E
2
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®
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®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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The datasheet is printed for reference information only.
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No Identification Needed
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©2000 Fairchild Semiconductor International
Rev. E
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