BC546ALEADFREE datasheet, PDF - EEWORLD Datasheet

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BC546ALEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,; CategoryDiscrete semiconductor The transistor; File Size331KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BC546ALEADFREE Overview

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

BC546ALEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	65 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Base Number Matches	1

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BC546,A,B

BC547,A,B,C

BC548,A,B,C

SILICON

NPN TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC546, BC547,

BC548 series devices are silicon NPN small signal

transistors, manufactured by the epitaxial planar

process, designed for general purpose amplifier

applications.

MARKING: FULL PART NUMBER

TO-92-18R CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Peak Emitter Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCES

VCEO

VEBO

ICM

IBM

IEM

TJ, Tstg

BC546

6.0

BC547

BC548

6.0

5.0

100

200

500

-65 to +150

250

150

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=30V

ICBO

VCB=30V, TA=150°C

VCE(SAT)

IC=10mA, IB=0.5mA

VCE(SAT)

IC=100mA, IB=5.0mA

VBE(SAT)

IC=10mA, IB=0.5mA

VBE(SAT)

IC=100mA, IB=5.0mA

VBE(ON)

VCE=5.0V, IC=2.0mA

580

VBE(ON)

VCE=5.0V, IC=10mA

hFE

VCE=5.0V, IC=10μA (BC546,A, BC547,A, BC548,A)

hFE

VCE=5.0V, IC=10μA (BC546B, BC547B, BC548B)

hFE

VCE=5.0V, IC=10μA (BC547C, BC548C)

hFE

VCE=5.0V, IC=2.0mA (BC546)

110

hFE

VCE=5.0V, IC=2.0mA (BC546A, BC547A, BC548A) 110

hFE

VCE=5.0V, IC=2.0mA (BC546B, BC547B, BC548B) 200

hFE

VCE=5.0V, IC=2.0mA (BC547, BC548)

110

hFE

VCE=5.0V, IC=2.0mA (BC547C, BC548C)

420

hfe

VCE=5.0V, IC=2.0mA, f=1.0kHz

125

VCE=5.0V, IC=10mA, f=35MHz

Cob

VCB=10V, IE=0, f=1.0MHz

Cib

VEB=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=0.2mA, RG=2.0kΩ,

B=200Hz, f=1.0kHz

TYP

MAX

5.0

250

600

700

900

700

770

150

270

450

220

450

800

900

300

2.5

9.0

2.0

UNITS

μA

MHz

R1 (13-December 2013)

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