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BDS17SMD-JQR

Description
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, CERAMIC, SMD1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size410KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BDS17SMD-JQR Overview

Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, CERAMIC, SMD1, 3 PIN

BDS17SMD-JQR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCERAMIC, SMD1, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-276AB
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Base Number Matches1
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BDS16SMD / BDS17SMD
High Voltage
Hermetic SMD1 (TO-276AB) Isolated Metal Package
Ideally suited for Power Linear, Switching
and general Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IE, IC
IB
PD
TJ
T stg
Collector – Base Voltage (IE = 0)
Collector – Emitter Voltage (IB = 0)
Emitter – Base Voltage (IC = 0)
Emitter, Collector Current
Base Current
Total Power Dissipation at
Junction Temperature Range
Storage Temperature Range
BDS16
120V
120V
BDS17
150V
150V
TC
=
25°C
5V
8A
2A
43.75W
+200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
4.0
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9549
Issue 1
Page 1 of 1
Website:
http://www.semelab-tt.com
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