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BYT12-800

Description
12A, 800V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size38KB,1 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BYT12-800 Overview

12A, 800V, SILICON, RECTIFIER DIODE

BYT12-800 Parametric

Parameter NameAttribute value
package instructionO-MUPM-D1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.9 V
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current12 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum power dissipation20 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse current50 µA
Maximum reverse recovery time0.12 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1
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