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BAT14-112R

Description
Mixer Diode, Medium Barrier, KA Band, 500ohm Z(V) Max, Silicon
CategoryDiscrete semiconductor    diode   
File Size53KB,1 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BAT14-112R Overview

Mixer Diode, Medium Barrier, KA Band, 500ohm Z(V) Max, Silicon

BAT14-112R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionS-CXMW-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage4 V
ConfigurationRING, 4 ELEMENTS
Maximum diode capacitance0.15 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandKA BAND
maximum impedance500 Ω
minimum impedance350 Ω
JESD-30 codeS-CXMW-F4
JESD-609 codee0
Number of components4
Number of terminals4
Maximum operating frequency40 GHz
Minimum operating frequency
Maximum operating temperature150 °C
Maximum output current50 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formMICROWAVE
Certification statusNot Qualified
surface mountYES
Minimum tangent signal sensitivity48 dBm
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationUNSPECIFIED
Schottky barrier typeMEDIUM BARRIER
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