Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon,
| Parameter Name | Attribute value |
| package instruction | O-MUPM-D1 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LEAKAGE CURRENT IS NOT AT 25 DEG C |
| application | POWER |
| Shell connection | CATHODE |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.4 V |
| JESD-30 code | O-MUPM-D1 |
| Maximum non-repetitive peak forward current | 125 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 1 |
| Maximum operating temperature | 175 °C |
| Maximum output current | 12 A |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Certification status | Not Qualified |
| Guideline | CECC50009-020 |
| Maximum repetitive peak reverse voltage | 600 V |
| Maximum reverse current | 200 µA |
| surface mount | NO |
| Terminal form | SOLDER LUG |
| Terminal location | UPPER |
| Base Number Matches | 1 |
| BYX42-600 | BYX42-1200 | BYX42-1200R | BYX42-300R | BYX42-300 | BYX42-600R | |
|---|---|---|---|---|---|---|
| Description | Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 12A, 1200V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 12A, 1200V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, | Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, |
| package instruction | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C |
| application | POWER | POWER | POWER | POWER | POWER | POWER |
| Shell connection | CATHODE | CATHODE | ANODE | ANODE | CATHODE | ANODE |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.4 V | 1.4 V | 1.4 V | 1.4 V | 1.4 V | 1.4 V |
| JESD-30 code | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 |
| Maximum non-repetitive peak forward current | 125 A | 125 A | 125 A | 125 A | 125 A | 125 A |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Phase | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 1 | 1 | 1 | 1 | 1 | 1 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Maximum output current | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Guideline | CECC50009-020 | CECC50009-020 | CECC50009-020 | CECC50009-020 | CECC50009-020 | CECC50009-020 |
| Maximum repetitive peak reverse voltage | 600 V | 1200 V | 1200 V | 300 V | 300 V | 600 V |
| Maximum reverse current | 200 µA | 200 µA | 200 µA | 200 µA | 200 µA | 200 µA |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | SOLDER LUG | SOLDER LUG | SOLDER LUG | SOLDER LUG | SOLDER LUG | SOLDER LUG |
| Terminal location | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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