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BAS70...B5000 / B5003
Silicon Schottky Diode
•
General-purpose diode for high-speed switching
•
Circuit protection
•
Voltage clamping
•
High-level detecting and mixing
•
Improved operating temperature range
due to extra-low thermal resistance
(see attached Forward current curves)
•
High volume packing size:
B5000: 9 x 10kreels, B5003: 10 x 3k reels
•
Not for automotive applications*
BAS70
3
BAS70-04
3
BAS70-05
3
BAS70-06
3
D 1
D 2
D 1
D 2
D 1
D 2
1
2
1
2
1
2
1
2
Type
BAS70
BAS70-04
BAS70-05
BAS70-06
Package
SOT23
SOT23
SOT23
SOT23
Configuration
single
series
common cathode
common anode
L
S
(nH)
1.8
1.8
1.8
1.8
Marking
73s
74s
75s
76s
* Automotive qualification ongoing
1
2006-08-04
BAS70...B5000 / B5003
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
Total power dissipation
BAS70,
T
S
≤
109 °C
BAS70-04, BAS70-06,
T
S
≤
101 °C
BAS70-05,
T
S
≤
95 °C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAS70
BAS70-04, BAS70-06
BAS70-05
Symbol
R
thJS
≤
165
≤
195
≤
220
Symbol
V
R
I
F
I
FSM
P
tot
Value
70
70
100
Unit
V
mA
mW
250
250
250
T
j
T
op
T
stg
150
-55 ... 125
-55 ... 150
°C
Value
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 µA
V
(BR)
I
R
V
F
Unit
max.
-
0.1
V
µA
mV
typ.
-
-
70
-
Reverse current
V
R
= 50 V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
300
600
720
∆
V
F
375
705
880
-
410
750
1000
20
Forward voltage matching
2)
I
F
= 10 mA
1
For
2
∆V
-
calculation of
R
thJA
please refer to Application Note Thermal Resistance
F
is the difference between lowest and highest
V
F
in a multiple diode component.
2
2006-08-04
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