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BAS21GW

Description
Rectifier Diode, 1 Element, 0.225A, 250V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size197KB,11 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric Compare View All

BAS21GW Overview

Rectifier Diode, 1 Element, 0.225A, 250V V(RRM), Silicon

BAS21GW Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.225 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.38 W
GuidelineAEC-Q101; IEC-60134
Maximum repetitive peak reverse voltage250 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BAS21GW
15 June 2017
High-voltage switching diode
Product data sheet
1. General description
High-voltage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD)
plastic package.
2. Features and benefits
High switching speed: t
rr
≤ 50 ns
Low leakage current: I
R
≤ 100 nA
High reverse voltage V
R
≤ 200 V
Low capacitance: C
d
≤ 2 pF
Small SMD plastic package
AEC-Q101 qualified
3. Applications
High-speed switching
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
I
F
V
R
V
F
I
R
t
rr
Parameter
forward current
reverse voltage
forward voltage
reverse current
reverse recovery time
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
V
R
= 200 V; pulsed; T
j
= 25 °C
I
F
= 10 mA; I
R
= 10 mA; R
L
= 100 Ω;
I
R(meas)
= 1 mA; T
j
= 25 °C
Conditions
T
j
= 25 °C
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
225
200
1.25
100
50
Unit
mA
V
V
nA
ns

BAS21GW Related Products

BAS21GW BAS21GWX BAS21GWJ
Description Rectifier Diode, 1 Element, 0.225A, 250V V(RRM), Silicon DIODE GEN PURP 200V 225MA SOD123 BAS21GW - High-voltage switching diode
Reach Compliance Code compliant compliant compliant
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-G2 R-PDSO-G2 R-PDSO-G2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 0.225 A 0.225 A 0.225 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.38 W 0.38 W 0.38 W
Guideline AEC-Q101; IEC-60134 AEC-Q101; IEC-60134 AEC-Q101; IEC-60134
Maximum repetitive peak reverse voltage 250 V 250 V 250 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Base Number Matches 1 1 1
Brand Name - Nexperia Nexperia
Manufacturer packaging code - SOD123 SOD123
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