Silicon Schottky Diodes
q
q
q
q
BAT 14- … R
Beam lead technology
Low dimension
High performance
Medium barrier
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
BAT 14-020 R
BAT 14-050 R
BAT 14-090 R
BAT 14-110 R
Marking
–
Ordering Code
Q62702-D1260
Q62702-D1269
Q62702-D1277
Q62702-D1286
Pin Configuration
Package
1)
R
Maximum Ratings
Parameter
Symbol
Values
BAT 14-020 R
BAT 14-050 R
Forward current
Junction temperature
Storage temperature range
Operating temperature range
I
F
T
j
T
stg
T
op
100
175
– 65 … + 150
– 65 … + 150
BAT 14-090 R
BAT 14-110 R
50
mA
˚C
Unit
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
BAT 14- ...R
BAT 14- … R
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Diode capacitance
V
R
= 0,
f
= 1 MHz
C
T
BAT 14-020 R
BAT 14-050 R
BAT 14-090 R
BAT 14-110 R
V
F
BAT 14-020 R
BAT 14-050 R
BAT 14-090 R
BAT 14-110 R
BAT 14-020 R
BAT 14-050 R
BAT 14-090 R
BAT 14-110 R
F
SSB
–
–
–
–
r
f
BAT 14-020 R
BAT 14-050 R
BAT 14-090 R
BAT 14-110 R
–
–
–
–
3.5
4.0
7.0
10.0
–
–
–
–
6.0
6.5
6.5
7.0
–
–
–
–
Ω
–
–
–
–
–
–
–
–
0.45
0.47
0.49
0.50
0.55
0.57
0.60
0.65
–
–
–
–
–
–
–
–
dB
–
–
–
–
0.30
0.20
0.14
0.10
0.35
0.25
0.15
0.12
V
pF
Values
typ.
max.
Unit
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
Single sideband noise figure
F
IF
= 1.5 dB,
P
LO
= 0 dBm,
f
IF
= 10.7 MHz
f
= 3.0 GHz
BAT 14-020 R
f
= 6.0 GHz
BAT 14-050 R
f
= 9.3 GHz
BAT 14-090 R
f
= 16 GHz
BAT 14-110 R
Differential forward resistance
I
F
= 10 mA
I
F
= 50 mA
Semiconductor Group
2