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BDB103

Description
Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, PLASTIC, BDB, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size32KB,2 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance  
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BDB103 Overview

Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, PLASTIC, BDB, 4 PIN

BDB103 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDIP-T4
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDIP-T4
JESD-609 codee3
Maximum non-repetitive peak forward current40 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)265
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BDB101
THRU
BDB107
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
*
Good for automation insertion
Surge overload rating - 40 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 1.0 gram
.079 (2)
BDB
FEATURES
* Epoxy : UL flammability classification 94V-0
* UL listed under the recognized component directory, file #E94233.
.240 (6.1)
.232 (5.9)
.303 (7.7)
.295 (7.5)
.350 (8.9)
.300 (7.6)
.413 (10.5)
.398 (10.1)
.135 (3.4)
.115 (2.9) .315
MAX.
(8.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.035 (0.9)
.031 (0.8)
.020
(0.5)
.307 (7.8)
.291 (7.4)
.094 (2.4)
.071 (1.8)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 40 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance from junction to case
Typical Thermal Resistance from junction to ambient
Operating and Storage Temperature Range
I
FSM
R
θ
JL
R
θ
JA
T
J,
T
STG
40
10
65
-55 to + 150
Amps
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
BDB101 BDB102 BDB103 BDB104 BDB105 BDB106 BDB107 UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
0
C/ W
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Forward Voltage Drop per Bridge
DC Blocking Voltage per element
@T
A
= 25
o
C
@T
A
= 125 C
o
o
SYMBOL
V
F
BDB101 BDB102 BDB103 BDB104 BDB105 BDB106 BDB107 UNITS
1.1
5.0
0.5
Volts
uAmps
mAmps
2005-3
REV: A
I
R
Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.

BDB103 Related Products

BDB103 BDB105 BDB106 BDB104
Description Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, PLASTIC, BDB, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, PLASTIC, BDB, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, PLASTIC, BDB, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 400V V(RRM), Silicon, PLASTIC, BDB, 4 PIN
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
package instruction R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
Contacts 4 4 4 4
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
JESD-609 code e3 e3 e3 e3
Maximum non-repetitive peak forward current 40 A 40 A 40 A 40 A
Number of components 4 4 4 4
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 265 265 265 265
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 600 V 800 V 400 V
surface mount NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1

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