CES2301 datasheet, PDF - EEWORLD Datasheet

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CES2301: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size101KB，4 Pages; ManufacturerChino-Excel

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CES2301 Overview

Transistor

CES2301 Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Base Number Matches	1

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CES2301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-20V, -2.8A, R

DS(ON)

= 100mΩ @V

= -4.5V.

DS(ON)

= 150mΩ @V

= -2.5V.

High dense cell design for extremely low R

DS(ON)

Rugged and reliable.

Lead free product is acquired.

SOT-23 package.

SOT-23

ABSOLUTE MAXIMUM RATINGS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

= 25 C unless otherwise noted

Symbol

stg

Limit

-20

Units

-2.8

-10

1.25

-55 to 150

Maximum Power Dissipation

Operating and Store Temperature Range

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Ambient

Symbol

θJA

Limit

100

Units

C/W

2005.February

7-6

http://www.cetsemi.com

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