CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 20 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM2401JGP
CURRENT 6 Ampere
FEATURE
* Small flat package. (SO-8 )
* Super high dense cell design for extremely low R
DS(ON)
.
* High power and current handing capability.
* Lead free product is acquired.
1
SO-8
4.06 (0.160)
3.70 (0.146)
8
CONSTRUCTION
* P-Channel Enhancement
5.00 (0.197)
4.69 (0.185)
4
5
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
.25 (0.010)
.17 (0.007)
6.20 (0.244)
5.80 (0.228)
CIRCUIT
8
D D
D
D
5
1
S S
S
G
4
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM2401JGP
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
-20
V
V
±
12
-6.0
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
(Note 3)
A
-20
2500
-55 to 150
-55 to 150
mW
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
50
°C/W
2006-02
RATING CHARACTERISTIC CURVES ( CHM2401JGP )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -20 V, V
GS
= 0 V
V
GS
= 12V,V
DS
= 0 V
V
GS
= -12V, V
DS
= 0 V
-20
-1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= -250 µA
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-3.2A
-0.5
35
50
10
-1
44
65
V
m
Ω
S
Forward Transconductance
V
DS
= -5V, I
D
= -4A
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -10V, V
GS
= 0V,
f = 1.0 MHz
1180
230
145
pF
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=-10V, I
D
=-4A
V
GS
=-4.5V
V
DD
= -10V
I
D
= -4A , V
GS
= -4.5 V
R
GEN
= 3
Ω
10.4
1.7
3.2
15.2
10
75
36
13.8
nC
30.4
20
150
72
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
-6.0
-1.0
A
V
Drain-Source Diode Forward Voltage I
S
= -1.0A , V
GS
= 0 V
(Note 2)
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