FT6168, FT6169, FT6170
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 12/15/20/25/35ns (Commercial)
– 20/25/35/45/55/70ns (FT6168 Military)
Low Power Operation (Commercial)
– 715 mW Active
– 193 mW Standby (TTL Input)
FT6168
– 83 mW Standby (CMOS Input)
FT6168
Single 5V±10% Power Supply
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
Fully TTL Compatible, Common I/O Ports
Three Options
–
FT6168
Low Power Standby Mode
–
FT6169
Fast Chip Select Control
–
FT6170
Fast Chip Select, Output Enable
Controls
Standard Pinout (JEDEC Approved)
–
FT6168:
20-pin DIP, SOJ, LCC, SOIC,
CERPACK, and Flat Pack
–
FT6169:
20-pin DIP and SOIC
–
FT6170:
22-pin DIP
DESCRIPTION
The
FT6168, FT6169
and
FT6170
are a family of
16,384-bit ultra high-speed static RAMs organised as 4K
x 4. All three devices have common input/output ports.The
FT6168
enters the standby mode when the chip enable
(CE) control goes HIGH; with CMOS input levels, power
consumption is only 83mW in this mode. Both the
FT6169
and the
FT6170
offer a fast chip select access time that
is only 67% of the address access time. In addition, the
FT6170
includes an output enable (OE) control to elimi-
nate data bus contention. The RAMs operate from a
single 5V ± 10% tolerance power supply.
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby.
The
FT6168
and
FT6169
are available in 20-pin (FT6170
in 22-pin) 300 mil DIP packages providing excellent
board level densities. The
FT6168
is also available in 20-
pin 300 mil SOIC, SOJ, CERPACK, and Flat Pack
packages.
The
FT6169
is also available in a 20-pin 300 mil SOIC
package.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
FT6168
FT6169
DIP (P2, C6, D2)
DIP (P2)
SOIC (S2)
SOIC (S2)
SOJ (J2)
CERPACK (F2)
SOLDER SEAL FLAT PACK (FS-2)
FT6170
DIP (P3)
FT6168
CE USED ON FT6168 ALSO FOR POWER DOWN FUNCTIONS
CE USED ON FT6169 FAST CHIP SELECT
OE OUTPUT ENABLE FUNCTION ON FT6170
1997
1/16
Rev A
FT6168, FT6169, FT6170
MAXIMUM RATINGS
(1)
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Value
– 0.5 to +7
– 0.5 to
V
CC
+0.5
–55 to +125
Unit
V
Symbol
T
BIAS
T
STG
P
T
I
OUT
Parameter
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
Value
– 55 to +125
– 65 to +150
1.0
50
Unit
°C
°C
W
mA
V
TERM
T
A
V
°C
RECOMMENDED OPERATING CONDITIONS
Grade
(2)
Commercial
Military
Ambient Temp
0°C to 70°C
–55°C to +125°C
Gnd
0V
0V
V
CC
5.0V ± 10%
5.0V ± 10%
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Conditions Typ. Unit
V
IN
= 0V
5
7
pF
pF
Output Capacitance V
OUT
= 0V
DC ELECTRICAL CHARACTERISTICS
Symbol
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OLC
V
OH
V
OHC
I
LI
I
LO
I
CC
I
SB
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output Low Voltage
(CMOS Load)
Output High Voltage
(TTL Load)
Output High Voltage
(CMOS Load)
Input Leakage Current
Output Leakage Current
Dynamic Operating
Current
Standby Power Supply
Current (TTL Input Levels)
FT6168
only
Standby Power
Supply Current
(CMOS Input Levels)
FT6168
only
1997
Test Conditions
FT6168/169/170
Min
2.2
–0.5(3)
V
CC
–0.2
–0.5(3)
Max
V
CC
+0.5
0.8
V
CC
+0.5
0.2
–1.2
0.4
0.2
2.4
V
CC
–0.2
Mil.
Comm’l
Mil.
Comm’l
–10
–5
–10
–5
___
___
Unit
V
V
V
V
V
V
V
V
V
V
CC
= Min., I
IN
= –18 mA
I
OL
= +8 mA, V
CC
= Min.
I
OLC
= +100 µA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
I
OHC
= –100 µA, V
CC
= Min.
V
CC
= Max., V
IN
= GND to V
CC
V
CC
= Max.,
CS
= V
IH
,
V
OUT
= GND to V
CC
+10
+5
+10
+5
130
35
µA
µA
mA
mA
V
CC
= Max., f = Max., Outputs Open
CE
≥
V
IH
, V
CC
= Max., f = Max.,
Outputs Open
CE
≥
V
HC
, V
CC
= Max., f = 0,
Outputs Open
V
IN
≤
V
LC
or V
IN
≥
V
HC
2/16
I
SB1
___
15
mA
Rev A
FT6168, FT6169, FT6170
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
AC CHARACTERISTICS—READ CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Sym
t
RC
t
AA
t
AC §
t
AC ‡
t
OH
t
LZ ‡
t
HZ †
t
OE†
t
OLZ †
t
OHZ †
t
RCS
t
RCH
t
PU §
t
PD §
Read Cycle Time
Parameter
-12
-15
-20
-25
-35
Min Max Min Max Min Max Min Max Min Max
12
12
12
8
2
2
7
8
0
6
0
0
0
12
0
0
0
15
0
7
0
0
0
20
2
2
8
10
0
9
0
0
0
25
15
15
15
9
2
2
9
12
0
11
0
0
0
35
20
20
20
12
2
2
10
15
0
15
25
25
25
15
2
2
15
15
35
35
35
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Enable Access Time
Chip Select Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable to Data Valid
Output Enable to Output in Low Z
Output Disable to Output in High Z
Read Command Setup Time
Read Command Hold Time
Chip Enable to Power Up Time
Chip Disable to Power Down Time
AC CHARACTERISTICS—READ CYCLE (CONTINUED)
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Sym
t
RC
t
AA
t
AC §
t
OH
t
LZ ‡
t
HZ †
t
RCS
t
RCH
t
PU §
t
PD §
Read Cycle Time
Parameter
-45
-55
-70
Min Max Min Max Min Max
45
45
45
2
2
25
0
0
0
45
0
0
0
55
2
2
25
0
0
0
70
55
55
55
2
2
30
70
70
70
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Read Command Setup Time
Read Command Hold Time
Chip Enable to Power Up Time
Chip Disable to Power Down Time
§
FT6168
only
†
FT6170
only
‡ Chip Select/Deselect for
FT6169
and
FT6170
1997
3/16
Rev A
FT6168, FT6169, FT6170
TIMING WAVEFORM OF READ CYCLE NO. 1 (ADDRESS CONTROLLED)
(5,6)
(
Notes:
5.
WE
is HIGH for READ cycle.
6.
CE/CS
and
OE
are LOW for READ cycle.
TIMING WAVEFORM OF READ CYCLE NO. 2 (CE
CS
CONTROLLED)
(5,7)
CE/CS
CE
(
FT6168 Only
)
TIMING WAVEFORM OF READ CYCLE NO. 3—FT6170 ONLY (OE
OE
CONTROLLED)
(5)
Notes:
7. ADDRESS must be valid prior to, or coincident with
CE/CS
transition
9. Read Cycle Time is measured from the last valid address to the first
low. For Fast
CS,
t
AA
must still be met.
transitioning address.
8. Transition is measured ±200mV from steady state voltage prior to
change, with loading as specified in Figure 1.
1997
4/16
Rev A
FT6168, FT6169, FT6170
AC ELECTRICAL CHARACTERISTICS - WRITE CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Sym
t
WC
t
cw
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
Write Cycle Time
Chip Enable Time to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time
Data Valid to End of Write
Data Hold Time
Write Enable to Output in High Z
Output Active from End of Write
0
Parameter
-12
-15
-20
-25
-35
Min Max Min Max Min Max Min Max Min Max
12
12
12
0
12
0
7
0
4
0
15
15
15
0
15
0
8
0
5
0
18
18
18
0
18
0
10
0
6
0
20
20
20
0
20
0
10
0
7
0
30
30
30
0
30
0
15
0
13
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
AC ELECTRICAL CHARACTERISTICS - WRITE CYCLE (CONTINUED)
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Sym
t
WC
t
cw
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
Write Cycle Time
Chip Enable Time to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Address Hold Time
Data Valid to End of Write
Data Hold Time
Write Enable to Output in High Z
Output Active from End of Write
0
Parameter
-45
-55
-70
Min Max Min Max Min Max
45
40
40
0
40
0
20
3
20
0
55
50
50
0
50
0
20
3
25
0
70
60
60
0
60
0
25
3
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1997
5/16
Rev A
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