MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA, U.S.A. Tel: 760-564-8656 • Fax 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
MAX™ 40 Series
HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR (TVS) DIODE
STAND-OFF VOLTAGE 12 TO 150 Volts
40000 Watt Peak Pulse Power
FEATURES
• Glass passivated junction
• Bidirectional
• 40000W Peak Pulse Power
capability on 10x1000
μs
waveform
• Excellent clamping capability
• Repetition rate (duty cycle):0.05%
• Sharp breakdown voltage
• Low incremental surge resistance
• Fast response time: typically less
than 1.0 ps from 0 volts to BV
• Typical IR less than 20μA above 10V
• Operation Tempature: -55°C to +150°C
See Demensions on Page 4
MECHANICAL DATA
Terminals: Ag Plated Axial leads, solderable per
MIL-STD-750, Method 2026
Mounting Position: Any
Weight: 1.490 ± 0.149g (0.053 ± 0.005 ounces)
DEVICES FOR BIPOLAR APPLICATIONS
Bidirectional use CA Suffix. Electrical characteristics apply in both directions.
Unidirectional A Suffix available as a special order
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
RATING
Peak Pulse Power Dissipation on 10/1000
μs
waveform
Peak Pulse Current of on 10-1000
μs
waveform
SYMBOL
Pppm
Ippm
VALUE
Minimum 20000
SEE CURVE
UNITS
Watts
Amps
5/21/2009
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. Tel: 760-564-8656 • Fax 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
MAX- 40™ Series
Cell
Count
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
3
3
3
3
3
4
4
4
4
4
4
6
6
6
6
6
6
8
REVERSE
STAND-
OFF
VOLTAGE
V
RWM
(V)
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
BREAKDOWN
TEST
PEAK
VOLTAGE
CURRENT
PULSE
V
BR
(V)
I
T
CURRENT
MIN. @I
T
Ipp (A)
(mA)
14.0
15.2
16.4
17.6
18.8
19.9
21.1
23.4
25.7
28.1
30.4
32.8
35.1
38.7
42.1
46.8
50.3
52.7
56.1
59.7
63.2
67.8
70.2
74.9
81.9
87.7
91.3
99.2
105.5
117.0
128.5
140.0
151.5
176.0
50
50
50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2010.1
1860.5
1724.1
1639.3
1538.5
1449.3
1369.6
1234.6
1126.8
1028.3
950.1
881.1
826.4
750.5
688.5
620.2
576.4
550.2
516.8
485.4
459.2
427.4
413.2
388.3
354.0
330.6
317.5
292.0
274.0
246.9
226.0
207.3
191.4
164.6
REVERSE
LEAKAGE
@ V
RWM
I
R
(μA)
2000
2000
2000
500
200
50
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
MAXIMUM
CLAMPING
VOLTAGE
@I
PP
V
C
(V)
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103.0
113.0
121.0
126.0
137.0
145
162
177
193
209
243
PART NUMBER
MAX40-12CA
MAX40-13CA
MAX40-14CA
MAX40-15CA
MAX40-16CA
MAX40-17CA
MAX40-18CA
MAX40-20CA
MAX40-22CA
MAX40-24CA
MAX40-26CA
MAX40-28CA
MAX40-30CA
MAX40-33CA
MAX40-36CA
MAX40-40CA
MAX40-43CA
MAX40-45CA
MAX40-48CA
MAX40-51CA
MAX40-54CA
MAX40-58CA
MAX40-60CA
MAX40-64CA
MAX40-70CA
MAX40-75CA
MAX40-78CA
MAX40-85CA
MAX40-90CA
MAX40-100CA
MAX40-110CA
MAX40-120CA
MAX40-130CA
MAX40-150CA
5/21/2009
MAX-40
Rating Charactistic Curves
KW
10000
1000
Non-repetitive pulse
waveform shown in
Fig. 3T
A
= 25ºC
PEAK PULSE
1
100
10
P
ppm
1
1
0.1
1
10
100
1,000
10,000
100,000
td PULSE WIDTH
1
µsec
FIG. 1 PEAK PULSE POWER RATING
Fig.2 - Pulse Derating Curve
100
Peak Pulse Power (P
PP
)
or Current (I
PP
)
Derating in Percentage,%
87.5
75
62.5
50
37.5
25
12.5
0
0
25
50
75
100
125
150
175
200
T
A
- Ambient Temperature (°C)
150
I
PPM
- Peak Pulse Current,% I
RSM
tr = 10μsec.
Peak Value
I
PPM
100
Half Value- I
PPM
2
TJ = 25°C
Pulse Width(td)is defined
as the point where the
peak current decays to
50% of I
PPM
50
10/1000μsec.Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
3.0
4.0
4.0
t - Time(ms)
Fig.3 - Pulse Waveform
5/21/2009
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA, U.S.A. Tel: 760-564-8656 • Fax 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
MAX™ 40 Series
Outline Dimensions
Stack 2 chip
0.131±0.00984
(3.33±0.25)
UNIT: Inch
(mm)
Stack 3 chip
0.162±0.00984
(4.12±0.25)
0.54 Max
(13.72Max)
0.264 Max
(6.7Max)
0.886 Min
(22.5Min)
0.54 Max
(13.72Ma)x
0.264 Max
(6.7Max)
0.049±0.002
(1.25±0.05)
0.442±0.028
(11.22±0.71)
0.049±0.002
(1.25±0.05)
0.489±0.028
(12.42±0.71)
0.866 Min
(22Min)
Stack 4 chip
0.192±0.00984
(4.88±0.25)
0.54 Max
(13.72Max)
0.54 Max
(13.72Max)
0.838 Min
(21.3Min)
0.049±0.002
(1.25±0.05)
0.519±0.028
(13.18±0.71)
Stack 6 chip
0.252±0.00984
(6.41±0.25)
0.264 Max
(6.7Max)
0.264 Max
(6.7Max)
0.838 Min
(21.3Min)
0.049±0.002
(1.25±0.05)
0.579±0.028
(14.71±0.71)
Stack 8 chip
0.36±0.018
(9.10±0.46)
0.54 Max
(13.72Max)
0.29 Max
(7.35Max)
0.787 Min
(20.0Min)
0.049±0.002
(1.25±0.05)
0.65±0.032
(16.50±0.83)
5/21/2009
Embedded System
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