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MBR1060

Description
10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size136KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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MBR1060 Overview

10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC

MBR1060 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage60 V
Maximum average forward current10 A
Maximum non-repetitive peak forward current150 A
BL
FEATURES
GALAXY ELECTRICAL
MBR1030 - - - MBR10100
VOLTAGE RANGE: 30 -
100
V
CURRENT: 10 A
SCHOTTKY BARRIER RECTIFIER
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling,
and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
TO-220AC
MECHANICAL DATA
Cas e:JEDEC TO-220AC,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1
Method 2026
Polarity: As m arked
Pos ition: Any
Weight:
0.064 ounces,1.81 gram
mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
1030
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m
rectified current @T
C
= 125°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage
(Note 1)
(I
F
=10A,T
C
=25
(I
F
=10A,T
C
=125
(I
F
=20A ,T
C
=25 )
(I
F
=20A ,T
C
=125 )
Maximum reverse current
at rated DC blocking voltage
@T
C
=25
@T
C
=125
)
)
MBR
1035
35
25
35
MBR MBR MBR
1040 1045 1050
40
28
40
45
32
45
10
150
-
MBR
1060
60
42
60
MBR MBR
UNITS
1090 10100
90
63
90
100
70
100
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
30
21
30
50
35
50
0.80
0.70
0.95
0.85
0.1
15
2.0
-
55
---- + 150
-
55
---- + 150
0.80
0.65
0.95
0.75
mA
/W
V
V
F
0.57
0.84
0.72
I
R
R
θJC
T
J
T
STG
6.0
3)
Maximum thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.T
C
=100
www.galaxycn.com
Document Number 0266032
BL
GALAXY ELECTRICAL
1.

MBR1060 Related Products

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Description 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC 15 A, SILICON, RECTIFIER DIODE, TO-220 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC

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