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CPC7557NTR

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size157KB,5 Pages
ManufacturerIXYS
Environmental Compliance
Download Datasheet Parametric View All

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CPC7557NTR Overview

Bridge Rectifier Diode,

CPC7557NTR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-G8
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage100 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDSO-G8
Humidity sensitivity level1
Maximum non-repetitive peak forward current2 A
Number of components4
Phase1
Number of terminals8
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage120 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
Diode Bridge
I
NTEGRATED
C
IRCUITS
D
IVISION
Bridge Characteristics
Parameter
Reverse Voltage
Forward Current
CPC7557
Description
Units
V
mA
rms
Rating
100
240
The CPC7557N is an integrated diode bridge built on
IXYS Integrated Circuits Division’s High Voltage SOI
technology.
Features
Monolithic Construction
Surface Mount Package
Ordering Information
Part
CPC7557N
Applications
Telecommunications Protection Clamp
High Voltage Multiplexer/Switch
Description
8-Pin SOIC in Tubes (100/Tube)
CPC7557NTR 8-Pin SOIC Tape & Reel (2000/Reel)
Pb
e
3
CPC7557N Diagram
A/B
+
B/A
-
DS-CPC7557-R04
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