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MBRB20100CD

Description
10 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size82KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MBRB20100CD Overview

10 A, 100 V, SILICON, RECTIFIER DIODE

MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBRB20100CT/D
Data Sheet
SWITCHMODE
Power
D2PAK Surface Mount Power Package
Rectifier
MBRB20100CT
Motorola Preferred Device
The D2PAK Power Rectifier employs the use of the Schottky Barrier principle
with a platinum barrier metal. These state–of–the–art devices have the
following features:
Package Designed for Power Surface Mount Applications
Center–Tap Configuration
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Epoxy Meets UL94, VO at 1/8″
Guaranteed Reverse Avalanche
Short Heat Sink Tab Manufactured — Not Sheared!
1
Similar in Size to Industry Standard TO–220 Package
Mechanical Characteristics
3
Case: Epoxy, Molded
Weight: 1.7 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 units per plastic tube
Available in 24 mm Tape and Reel, 800 units per 13″ reel by adding a “T4”
suffix to the part number
Marking: B20100T
MAXIMUM RATINGS, PER LEG
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 110°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 100°C
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0
µs,
1.0 kHz)
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR)
Total Device
IFRM
IFSM
IRRM
Tstg
TJ
dv/dt
Symbol
VRRM
VRWM
VR
IF(AV)
Value
100
Unit
Volts
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
100 VOLTS
4
4
1
3
CASE 418B–02
D2PAK
10
20
20
150
0.5
– 65 to +175
– 65 to +150
10000
Amps
Amps
Amps
Amp
°C
°C
V/µs
THERMAL CHARACTERISTICS, PER LEG
Thermal Resistance — Junction to Case
— Junction to Ambient (1)
(1) See Chapter 7 for mounting conditions
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
R
θJC
R
θJA
2.0
50
°C/W
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Rev 1
©
Rectifier
Inc. 1996
Data
Motorola,
Device
1

MBRB20100CD Related Products

MBRB20100CD MBRB20100CT MBRB20100CT/D MBRB20100CT-D MBRB20100CTD
Description 10 A, 100 V, SILICON, RECTIFIER DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE

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