DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CD64ES, 4516CD64PS
16 M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
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Description
Features
Part number
MC-4516CD64ES-A10B
MC-4516CD64PS-A10B
The MC-4516CD64ES and MC-4516CD64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module
These modules provide high density and large quantities of memory in a small space without utilizing the surface-
(Small Outline DIMM) on which 8 pieces of 128 M SDRAM:
µ
PD45128163 are assembled.
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
•
16,777,216 words by 64 bits organization
•
Clock frequency and access time from CLK
/CAS latency
CL = 3
Clock frequency (MAX.)
100 MHz
67 MHz
Access time from CLK (MAX.)
7 ns
8 ns
7 ns
8 ns
•
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
•
Pulsed interface
•
Possible to assert random column address in every cycle
•
Programmable burst-length (1, 2, 4, 8 and Full Page)
•
Programmable /CAS latency (2, 3)
•
Quad internal banks controlled by BA0, BA1 (Bank Select)
•
Programmable wrap sequence (Sequential / Interleave)
•
Automatic precharge and controlled precharge
•
CBR (Auto) refresh and self refresh
•
Single 3.3 V
±
0.3 V power supply
•
LVTTL compatible
•
4,096 refresh cycles/64 ms
•
Burst termination by Burst Stop command and Precharge command
•
Unbuffered type
•
Serial PD
•
144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
Document No. E0065N10 (1st edition)
(Previous No. M13612EJ5V0DS00)
Date Published January 2001 CP (K)
Printed in Japan
L
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
o
Pr
CL = 2
CL = 3
100 MHz
67 MHz
CL = 2
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
du
ct
Electrical Specifications
•
All voltages are referenced to V
SS
(GND).
•
After power up, wait more than 100
µ
s and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Voltage on power supply pin relative to GND
Voltage on input pin relative to GND
Short circuit output current
Power dissipation
Symbol
V
CC
V
T
I
O
P
D
T
A
T
stg
Condition
Rating
–0.5 to +4.6
–0.5 to +4.6
50
8
0 to +70
–55 to +125
Unit
V
V
mA
W
°C
°C
EO
Storage temperature
Operating ambient temperature
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
High level input voltage
Low level input voltage
Operating ambient temperature
Symbol
V
CC
V
IH
V
IL
T
A
Condition
MIN.
3.0
2.0
–0.3
0
TYP.
3.3
MAX.
3.6
V
CC
+ 0.3
+ 0.8
70
Unit
V
V
V
°C
Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Input capacitance
Data input/output capacitance
L
o
Pr
Symbol
C
I1
C
I2
C
I3
C
I4
C
I5
C
I/O
Test condition
CLK0, CLK1
CKE0, CKE1
/CS0, /CS1
DQMB0 – DQMB7
DQ0 - DQ63
Data Sheet E0065N10
MIN.
TYP.
MAX.
60
30
Unit
pF
A0 - A11, BA0(A13), BA1(A12),
/RAS, /CAS, /WE
du
30
30
20
20
pF
ct
5
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