Agilent CNY17-x
Phototransistor Optocoupler
High Collector-Emitter
Voltage Type
Data Sheet
Description
The CNY17 contains a light emitting
diode optically coupled to a photo-
transistor. It is packaged in a 6-pin
DIP package and available in wide-
lead spacing option and lead bend
SMD option. Collector-emitter
voltage is above 70 V. Response
time, t
r
, is typically 5
µs
and
minimum CTR is 40% at input
current of 10 mA.
Ordering Information
Specify part number followed by
Option Number (if desired).
CNY17-3-XXXE
Lead Free
Option Number
000 = No Options
060 = IEC/EN/DIN EN 60747-5-2
Option
W00 = 0.4" Lead Spacing Option
300 = Lead Bend SMD Option
500 = Tape and Reel Packaging
Option
Functional Diagram
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
6
5
4
ANODE
1
+
I
F
6
BASE
Features
• High collector-emitter voltage
(V
CEO
= 70 V)
• High input-output isolation voltage
(V
iso
= 5000 Vrms)
• Current Transfer Ratio
(CTR: min. 40% at I
F
= 10 mA,
V
CE
= 5 V)
• Response time (t
r
: typ., 5
µs
at
V
CC
= 10 V, I
C
= 2 mA, R
L
= 100
Ω)
• Dual-in-line package
• UL approved
• CSA approved
• IEC/EN/DIN EN 60747-5-2 approved
• Options available:
– Leads with 0.4" (10.16 mm)
spacing (W00)
– Leads bends for surface
mounting (300)
– Tape and reel for SMD (500)
– IEC/EN/DIN EN 60747-5-2
approvals (060)
Applications
• System appliances, measuring
instruments
• Signal transmission between
circuits of different potentials and
impedances
• Feedback circuit in power supply
Schematic
V
F
CATHODE
–
2
I
C
5
COLLECTOR
1
1. ANODE
2. CATHODE
3. NC
2
3
4. EMITTER
5. COLLECTOR
6. BASE
4
EMITTER
CAUTION:
It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawings
CNY17-X-000E
MODEL
NO. *2
7.3
±
0.5
(0.287)
7.62
±
0.3
(0.3)
LEAD FREE
A CNY17 -
Y Y WW
3.5
±
0.5
(0.138)
6.5
±
0.5
(0.256)
2.8
±
0.5
(0.110)
3.3
±
0.5
(0.13)
0.5
±
0.1
(0.02)
0.5
TYP.
(0.02)
ANODE
DATE
CODE *1
DIMENSIONS IN MILLIMETERS AND (INCHES)
2.54
±
0.25
(0.1)
0.26
(0.010)
7.62 ~ 9.98
CNY17-X-060E
MODEL
NO. *2
7.3
±
0.5
(0.287)
7.62
±
0.3
(0.3)
LEAD FREE
A CNY17- V
Y Y WW
3.5
±
0.5
(0.138)
6.5
±
0.5
(0.256)
2.8
±
0.5
(0.110)
3.3
±
0.5
(0.13)
0.5
±
0.1
(0.02)
0.5
TYP.
(0.02)
ANODE
DATE
CODE *1
DIMENSIONS IN MILLIMETERS AND (INCHES)
2.54
±
0.25
(0.1)
0.26
(0.010)
7.62 ~ 9.98
CNY17-X-W00E
7.3
±
0.5
(0.287)
7.62
±
0.3
(0.3)
MODEL
NO. *2
LEAD FREE
A CNY17 -
Y Y WW
3.5
±
0.5
(0.138)
6.5
±
0.5
(0.256)
2.8
±
0.5
(0.110)
0.5
±
0.1
(0.02)
2.3
±
0.5
(0.09)
0.26
(0.010)
10.16
±
0.5
(0.4)
6.9
±
0.5
(0.272)
ANODE
DATE
CODE *1
2.54
±
0.25
(0.1)
DIMENSIONS IN MILLIMETERS AND (INCHES)
2
CNY17-X-300E
MODEL
NO. *2
7.3
±
0.5
(0.287)
7.62
±
0.3
(0.3)
0.35 +0.15/-0.10
(0.014)
LEAD FREE
A CNY17 -
Y Y WW
3.5
±
0.5
(0.138)
6.5
±
0.5
(0.256)
1.2
±
0.1
(0.047)
2.54
±
0.25
(0.1)
0.35
±
0.25
(0.014)
1.0
±
0.25
(0.039)
10.16
±
0.3
(0.4)
ANODE
DATE
CODE *1
DIMENSIONS IN MILLIMETERS AND (INCHES)
Temperature (°C)
Solder Reflow Temperature Profile
1) One-time soldering reflow is
recommended within the
condition of temperature and
time profile shown at right.
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
device. Keep the temperature on
the package of the device within
the condition of (1) above.
30 seconds
250°C
217°C
200°C
260°C (Peak Temperature)
150°C
60 sec
25°C
60 ~ 150 sec
90 sec
Time (sec)
60 sec
Absolute Maximum Ratings
Storage Temperature, T
S
Operating Temperature, T
A
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, I
F
Reverse Input Voltage, V
R
Input Power Dissipation, P
I
Collector Current, I
C
Collector-Emitter Voltage, V
CEO
Emitter-Collector Voltage, V
ECO
Collector-Base Voltage, V
CBO
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage, V
iso
(AC for 1 minute, R.H. = 40 ~ 60%)
–55˚C to +150˚C
–55˚C to +100˚C
260˚C for 10 s
60 mA
6V
100 mW
150 mA
70 V
6V
70 V
150 mW
250 mW
5000 Vrms
3
Electrical Specifications (T
A
= 25˚C)
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Current
*Current Transfer Ratio
CNY17-1
CNY17-2
CNY17-3
CNY17-4
Symbol
V
F
I
R
C
t
I
CEO
BV
CEO
BV
ECO
BV
CBO
I
C
CTR
Min.
–
–
–
–
70
6
70
4
40
63
100
160
–
–
–
1 x 10
11
–
Typ.
1.4
–
–
–
–
–
–
–
–
–
–
–
–
5
5
–
–
Max.
1.7
10
100
50
–
–
–
32
80
125
200
320
0.3
10
10
–
2
Units
V
µA
pF
nA
V
V
V
mA
%
Test Conditions
I
F
= 60 mA
V
R
= 6 V
V = 0, f = 1 MHz
V
CE
= 10 V
I
C
= 0.1 mA, I
F
= 0
I
E
= 10
µA,
I
F
= 0
I
C
= 0.1 mA, I
F
= 0
I
F
= 10 mA
V
CE
= 5 V
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
Isolation Resistance
Floating Capacitance
V
CE(sat)
t
r
t
f
R
iso
C
f
V
µs
µs
Ω
pF
I
F
= 10 mA, I
C
= 2.5 mA
V
CE
= 5 V, I
C
= 10 mA
R
L
= 100
Ω
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
* CTR =
I
C
x 100%
I
F
P
C
– COLLECTOR POWER DISSIPATION – mW
80
I
F
– FORWARD CURRENT – mA
200
60
160
150
40
100
20
50
0
-55
-25
0
25
50
75
100 125
0
-55
-25
0
25
50
75
100 125
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
Figure 1. Forward current vs. temperature.
Figure 2. Collector power dissipation vs.
temperature.
Figure 3. Frequency response.
4
CTR – CURRENT TRANSFER RATIO – %
500
I
F
– FORWARD CURRENT – mA
200
180
160
140
120
100
80
60
40
20
0
0
45
I
C
– COLLECTOR CURRENT – mA
V
CE
= 5 V
T
A
= 25°C
T
A
= 75°C
200
100
50
20
10
5
2
1
0
0.5
1.0
1.5
2.0
2.5
3.0
T
A
= 50°C
T
A
= 25°C
T
A
= 0°C
T
A
= -25°C
40 I
F
= 30 mA
35
30
25
20
15
10
5
0
0
2
I
F
= 10 mA
I
F
= 5 mA
I
F
= 2 mA
4
6
I
F
= 20 mA
T
A
= 25°C
P
C
(MAX.)
R
BE
=
100 kΩ
500 kΩ
2
5
10
20
50
8
10
V
F
– FORWARD VOLTAGE – V
I
F
– FORWARD CURRENT – mA
V
CE
– COLLECTOR-EMITTER VOLTAGE – V
Figure 4. Forward current vs. forward voltage.
Figure 5. Current transfer ratio vs. forward
current.
Figure 6. Collector current vs. collector-
emitter voltage.
RELATIVE CURRENT TRANSFER RATIO – %
I
CEO
– COLLECTOR DARK CURRENT – A
150
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
I
F
= 10 mA
V
CE
= 5 V
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
-55
I
F
= 10 mA
I
C
= 2.5 mA
10
-6
10
-7
10
-8
10
-9
10
-10
10
-11
10
-12
10
-13
-30
0
20
40
60
80
100
V
CE
= 10 V
100
50
0
-55
-25
0
25
50
75
100
-25
0
25
50
75
100
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
Figure 7. Relative current transfer ratio vs.
temperature.
Figure 8. Collector-emitter saturation
voltage vs. temperature.
Figure 9. Collector dark current vs.
temperature.
10
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
RESPONSE TIME – µs
5
I
F
= 10 mA
V
CC
= 5 V
T
A
= 25°C
tr
tf
6
T
A
= 25°C
5
4
3
2
1
0
I
C
= 0.5 mA
I
C
= 1 mA
I
C
= 2 mA
I
C
= 3 mA
I
C
= 5 mA
2
1
0.5
0.02
0.05
0.1
0.2
0.5
0
2.5
5.0
7.5
10.0
12.5
R
L
– LOAD RESISTANCE – kΩ
I
F
– FORWARD CURRENT – mA
Figure 10. Response time vs. load resistance.
Figure 11. Collector-emitter saturation
voltage vs. forward current.
5
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