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C1815LLT1

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size206KB,2 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
Download Datasheet Parametric Compare View All

C1815LLT1 Overview

Transistor

C1815LLT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.15 A
ConfigurationSingle
Minimum DC current gain (hFE)130
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)80 MHz
Base Number Matches1
C1815LT1
TRANSISTOR(NPN)
P b
Lead(Pb)-Free
1
BASE
1
2
2
EMITTER
COLLECTOR
3
3
FEATURES
Power dissipation
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
SOT-23
Value
60
50
5
150
200
150
-55-15
0
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
mitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test conditions
I
C
= 100uA, I
E
=0
I
C
= 0.1mA, I
B
=0
V
CB
=60V, I
E
=0
V
CE
=50V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
= 6V, I
C
= 2mA
I
C
=100mA, I
B
= 10mA
I
C
=100mA, I
B
= 10mA
V
CE
=10V, I
C
= 1mA,
f=30MHz
80
130
Min
60
50
0.1
0.1
0.1
400
0.25
1
V
V
MHz
Typ
Max
Unit
V
V
uA
uA
uA
CLASSIFICATION OF h
FE
Rank
Range
L
130-200
H
200-400
Device Marking
C1815LT1 = HF
WEITRON
http://www.weitron.com.tw
1/2
23-Oct-2013

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