MCP661/2/3/5
60 MHz, 6 mA Op Amps
Features
•
•
•
•
•
•
•
•
Gain Bandwidth Product: 60 MHz (typical)
Short Circuit Current: 90 mA (typical)
Noise: 6.8 nV/√Hz (typical, at 1 MHz)
Rail-to-Rail Output
Slew Rate: 32 V/µs (typical)
Supply Current: 6.0 mA (typical)
Power Supply: 2.5V to 5.5V
Extended Temperature Range: -40°C to +125°C
Description
The Microchip Technology, Inc. MCP661/2/3/5 family of
operational amplifiers features high gain bandwidth
product (60 MHz, typical) and high output short circuit
current (90 mA, typical). Some also provide a Chip
Select pin (CS) that supports a low power mode of
operation. These amplifiers are optimized for high
speed, low noise and distortion, single-supply
operation with rail-to-rail output and an input that
includes the negative rail.
This family is offered in single (MCP661), single with
CS pin (MCP663), dual (MCP662) and dual with
two CS pins (MCP665). All devices are fully specified
from -40°C to +125°C.
Typical Applications
•
•
•
•
Driving A/D Converters
Power Amplifier Control Loops
Barcode Scanners
Optical Detector Amplifier
Typical Application Circuit
V
DD
/2
V
IN
R
1
R
3
MCP66X
Power Driver with High Gain
R
2
V
OUT
R
L
Design Aids
•
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Mindi™ Circuit Designer & Simulator
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
Package Types
MCP661
SOIC
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 NC
7 V
DD
6 V
OUT
5 NC
MCP662
SOIC
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
MCP663
SOIC
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 CS
7 V
DD
6 V
OUT
5 NC
MCP665
MSOP
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
CS
A
5
10 V
DD
9 V
OUTB
8 V
INB
–
7 V
INB
+
6 CS
B
MCP662
3x3 DFN *
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
V
OUTA
V
INA
–
V
INA
+
V
SS
CS
A
1
2
3
4
5
MCP665
3x3 DFN *
10
V
DD
9
8
7
6
V
OUTB
V
INB
–
V
INB
+
CS
B
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
©
2009 Microchip Technology Inc.
DS22194A-page 1
MCP661/2/3/5
NOTES:
DS22194A-page 2
©
2009 Microchip Technology Inc.
MCP661/2/3/5
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
.......................................................................6.5V
Current at Input Pins ....................................................±2 mA
Analog Inputs (V
IN
+ and V
IN
–) †† . V
SS
– 1.0V to V
DD
+ 1.0V
All other Inputs and Outputs .......... V
SS
– 0.3V to V
DD
+ 0.3V
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ..........................±150 mA
Storage Temperature ...................................-65°C to +150°C
Max. Junction Temperature ........................................ +150°C
ESD protection on all pins (HBM, MM)
................≥
1 kV, 200V
†
Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1.2 “Input Voltage and Current Limits”.
1.2
Specifications
DC ELECTRICAL SPECIFICATIONS
TABLE 1-1:
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/3,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 kΩ to V
L
and CS = V
SS
(refer to
Figure 1-2).
Parameters
Input Offset
Input Offset Voltage
Input Offset Voltage Drift
Power Supply Rejection Ratio
Input Current and Impedance
Input Bias Current
Across Temperature
Across Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common-Mode Input Voltage Range
Common-Mode Rejection Ratio
Open Loop Gain
DC Open Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Sym
V
OS
ΔV
OS
/ΔT
A
PSRR
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
V
CMR
CMRR
CMRR
A
OL
A
OL
V
OL
, V
OH
V
OL
, V
OH
Min
-8
—
61
—
—
—
—
—
—
V
SS
−
0.3
64
66
88
94
V
SS
+ 25
V
SS
+ 50
±45
±40
2.5
3
Typ
±1.8
±2.0
76
6
130
1700
±10
10 ||9
10
13
||2
—
79
81
117
126
—
—
±90
±80
—
6
13
Max
+8
—
—
—
—
5,000
—
—
—
V
DD
−
1.3
—
—
—
—
V
DD
−
25
V
DD
−
50
±145
±150
5.5
9
Units
Conditions
mV
µV/°C T
A
= -40°C to +125°C
dB
pA
pA
pA
pA
Ω||pF
Ω||pF
V
dB
dB
dB
dB
mV
mV
mA
mA
V
mA
No Load Current
(Note 1)
V
DD
= 2.5V, V
CM
= -0.3 to 1.2V
V
DD
= 5.5V, V
CM
= -0.3 to 4.2V
V
DD
= 2.5V, V
OUT
= 0.3V to 2.2V
V
DD
= 5.5V, V
OUT
= 0.3V to 5.2V
V
DD
= 2.5V, G = +2,
0.5V Input Overdrive
V
DD
= 5.5V, G = +2,
0.5V Input Overdrive
V
DD
= 2.5V
(Note 2)
V
DD
= 5.5V
(Note 2)
T
A
= +85°C
T
A
= +125°C
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
2:
I
SC
I
SC
V
DD
I
Q
See
Figure 2-5
for temperature effects.
The I
SC
specifications are for design guidance only; they are not tested.
©
2009 Microchip Technology Inc.
DS22194A-page 3
MCP661/2/3/5
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 kΩ to V
L
, C
L
= 20 pF and CS = V
SS
(refer to
Figure 1-2).
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Open Loop Output Impedance
AC Distortion
Total Harmonic Distortion plus Noise
Differential Gain, Positive Video
(Note 1)
Differential Gain, Negative Video
(Note 1)
Differential Phase, Positive Video
(Note 1)
Differential Phase, Negative Video
(Note 1)
Step Response
Rise Time, 10% to 90%
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Note 1:
Sym
GBWP
PM
R
OUT
THD+N
DG
DG
DP
DP
Min
—
—
—
—
—
—
—
—
Typ
60
65
10
0.003
0.3
0.3
0.3
0.9
Max
—
—
—
—
—
—
—
—
Units
MHz
°
Ω
%
%
%
°
°
G = +1
Conditions
G = +1, V
OUT
= 2V
P-P
, f = 1 kHz,
V
DD
= 5.5V, BW = 80 kHz
NTSC, V
DD
= +2.5V, V
SS
= -2.5V,
G = +2, V
L
= 0V, DC V
IN
= 0V to 0.7V
NTSC, V
DD
= +2.5V, V
SS
= -2.5V,
G = +2, V
L
= 0V, DC V
IN
= 0V to -0.7V
NTSC, V
DD
= +2.5V, V
SS
= -2.5V,
G = +2, V
L
= 0V, DC V
IN
= 0V to 0.7V
NTSC, V
DD
= +2.5V, V
SS
= -2.5V,
G = +2, V
L
= 0V, DC V
IN
= 0V to -0.7V
G = +1, V
OUT
= 100 mV
P-P
G = +1
f = 0.1 Hz to 10 Hz
t
r
SR
E
ni
e
ni
i
ni
—
—
—
—
5
32
14
6.8
4
—
—
—
—
—
ns
V/µs
µV
P-P
nV/√Hz f = 1 MHz
fA/√Hz f = 1 kHz
These specifications are described in detail in
Section 4.3 “Distortion”.
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 kΩ to V
L
, C
L
= 20 pF and CS = V
SS
(refer to
Figure 1-1
and
Figure 1-2).
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
CS Internal Pull Down Resistor
Amplifier Output Leakage
CS Dynamic Specifications
CS Input Hysteresis
CS High to Amplifier Off Time
(output goes High-Z)
CS Low to Amplifier On Time
Sym
Min
Typ
Max
Units
Conditions
V
IL
I
CSL
V
IH
I
CSH
I
SS
R
PD
I
O(LEAK)
V
HYST
t
OFF
t
ON
V
SS
—
—
-0.1
0.2V
DD
—
V
nA
CS = 0V
0.8V
DD
—
-2
—
—
—
—
—
-0.7
-1
5
40
V
DD
—
—
—
—
—
—
10
V
µA
µA
MΩ
nA
CS = V
DD
, T
A
= +125°C
CS = V
DD
0.25
200
2
V
ns
µs
G = +1 V/V, V
L
= V
SS
CS = 0.8V
DD
to V
OUT
= 0.1(V
DD
/2)
G = +1 V/V, V
L
= V
SS
,
CS = 0.2V
DD
to V
OUT
= 0.9(V
DD
/2)
DS22194A-page 4
©
2009 Microchip Technology Inc.
MCP661/2/3/5
TABLE 1-4:
TEMPERATURE SPECIFICATIONS
Sym
T
A
T
A
T
A
θ
JA
θ
JA
θ
JA
θ
JA
Electrical Characteristics:
Unless otherwise indicated, all limits are specified for: V
DD
= +2.5V to +5.5V, V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Min
-40
-40
-65
—
—
—
—
Typ
—
—
—
60
149.5
57
202
Max
+125
+125
+150
—
—
—
—
Units
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
(Note 2)
(Note 2)
(Note 1)
Conditions
Thermal Package Resistances
Thermal Resistance, 8L-3x3 DFN
Thermal Resistance, 8L-SOIC
Thermal Resistance, 10L-3x3 DFN
Thermal Resistance, 10L-MSOP
Note 1:
2:
Operation must not cause T
J
to exceed Maximum Junction Temperature specification (150°C).
Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.
1.3
Timing Diagram
0 nA
(typical)
V
IL
t
ON
V
OUT
High-Z
-1 µA
(typical)
On
-6 mA
(typical)
V
IH
t
OFF
High-Z
-1 µA
(typical)
EQUATION 1-1:
G
DM
= R
F
⁄
R
G
V
CM
=
(
V
P
+ V
DD
⁄
2
)
⁄
2
I
CS
CS
1 µA
(typical)
1 µA
(typical)
V
OUT
=
(
V
DD
⁄
2
)
+
(
V
P
–
V
M
)
+ V
OST
(
1 + G
DM
)
Where:
G
DM
= Differential Mode Gain
V
CM
= Op Amp’s Common Mode
Input Voltage
V
OST
= Op Amp’s Total Input Offset
Voltage
(V/V)
(V)
(mV)
V
OST
= V
IN–
–
V
IN+
I
SS
FIGURE 1-1:
Timing Diagram.
C
F
6.8 pF
R
G
10 kΩ
V
P
V
IN+
MCP66X
V
IN–
V
M
R
G
10 kΩ
R
F
10 kΩ
C
F
6.8 pF
R
L
1 kΩ
C
L
20 pF
V
OUT
C
B1
100 nF
R
F
10 kΩ
V
DD
1.4
Test Circuits
V
DD
/2
The circuit used for most DC and AC tests is shown in
Figure 1-2.
This circuit can independently set V
CM
and
V
OUT
; see
Equation 1-1.
Note that V
CM
is not the
circuit’s common mode voltage ((V
P
+ V
M
)/2), and that
V
OST
includes V
OS
plus the effects (on the input offset
error, V
OST
) of temperature, CMRR, PSRR and A
OL
.
C
B2
2.2 µF
V
L
FIGURE 1-2:
AC and DC Test Circuit for
Most Specifications.
©
2009 Microchip Technology Inc.
DS22194A-page 5
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