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CTB12-1200TW

Description
4 Quadrant Logic Level TRIAC, 1200V V(DRM), 12A I(T)RMS, TO-220AB, TO-220AB, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size118KB,2 Pages
ManufacturerCrydom
Websitehttp://www.crydom.com/en/index.shtml
Environmental Compliance
Download Datasheet Parametric View All

CTB12-1200TW Overview

4 Quadrant Logic Level TRIAC, 1200V V(DRM), 12A I(T)RMS, TO-220AB, TO-220AB, 3 PIN

CTB12-1200TW Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage20 V/us
Maximum DC gate trigger current5 mA
Maximum DC gate trigger voltage1.3 V
Maximum holding current10 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum leakage current0.005 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current12 A
Off-state repetitive peak voltage1200 V
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device type4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches1
POWER COMPONENTS
Applications
• Phase Control
• Static Switching
• Light Dimming
• Motor Speed Control
• Kitchen Equipment
• Power Tools
• Solenoid Valve Controls:
• Dishwashers
• Washing Machines
>
Suitable for General Purpose AC Switching
>
Alternistor/No Snubber Versions
for Inductive Loads
>
Logic Level Available for use with
Microcontrollers and Low Level Devices
>
IGT Range 5-50 mA (Q1)
>
V
DRM
/V
RMM
400, 600, 800, 1200V
CTA/CTB12
12Amp - 400/600/800/1200V - TRIAC
SYMBOL
I
T(RMS)
I
TSM
I
2
t
di/dt
I
GM
P
G(AV)
Tstg
Tj
V
ISO
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25˚C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
=2 x I
GT
, tr<100ns, Tj = 125˚C
Peak Gate Current @ Tj = 125˚C
Average Gate Power Dissipation @ Tj = 125˚C
Tc = 105˚C
Tc = 90˚C
CONDITIONS
TO-220AB
TO-220AB Iso
F =50 Hz
F =60 Hz
tp = 10 ms
F =120 Hz
tp = 20 µs
RATING
12A
120A
126A
78A
2
s
50A/µs
4A
1W
-40 to +150˚C
-40 to +125˚C
2500 V
RMS
A1
A2
G
Storage Temperature Range
Operating Junction Temperature Range
Isolation Voltage (CTA Series only)
A2
TO-220AB Isolated
(CTA12)
Electrical Characteristics
ALTERNISTOR/NO SNUBBER AND LOGIC LEVEL (3 Quadrants)
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
NOTE 1
QI-II-III
QI-II-III
Tj = 125˚C
QI-II-III
TW
5mA
1.3V
0.2V
10mA
QI-III
Q-II
10mA
15mA
20V/µs
3.5A/ms
1A/ms
SW
10mA
1.3V
0.2V
15mA
25mA
30mA
40V/µs
5.4A/ms
2.9A/ms
6.5A/ms
C
NOTE 1
CW
35mA
1.3V
0.2V
35mA
50mA
60mA
400V/µs
BW
50mA
1.3V
0.2V
50mA
70mA
80mA
1000V/µs
A1
A2
V
GT
MAX @ V
D
=12 V, R
L
= 30Ω
G
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
I
H
MAX @ I
T
= 500 mA
I
L
MAX @ I
G
= 1.2 I
GT
I
L
MAX @ I
G
= 1.2 I
GT
A2
TO-220AB Non-Isolated
(CTB12)
NOTE 2
dv/dt MIN @ VD = 67%V
DRM
(gate open)
NOTE 2
Tj = 125˚C
(di/dt)c MIN @ (dv/dt)c = 0.1 V/ms
NOTE 2
Tj = 125˚C
Tj = 125˚C
Tj = 125˚C
(di/dt)c MIN @ (dv/dt)c = 10 V/ms
NOTE 2
G
A1
(di/dt)c MIN without Snubber
STANDARD (4 Quadrants)
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
NOTE 2
12A/ms
B
50mA
100mA
1.3V
0.2V
QI-II-III
QIV
Q-All
Tj = 125˚C
Q-All
25mA
50mA
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
NOTE 1
V
GT
MAX @ V
D
=12 V, R
L
= 30Ω
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
I
H
MAX @ I
T
= 500 mA
I
L
MAX @ I
G
= 1.2 I
GT
I
L
MAX @ I
G
= 1.2 I
GT
dv/dt MIN @ VD = 67%V
DRM
(gate open)
NOTE 2
Tj = 125˚C
(dv/dt)c MIN @ (di/dt)c = 2.7 A/ms
NOTE 2
Tj = 125˚C
NOTE 2
25mA
QI-III-IV
Q-II
40mA
80mA
200V/µs
5V/µs
50mA
50mA
100mA
400V/µs
10V/µs
ISO9001 Certified
GENERAL NOTES
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1
3. All parameters at 25 degrees C unless otherwise specified.
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