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S18C10A0M

Description
Silicon Controlled Rectifier, 105000mA I(T), 1000V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size211KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

S18C10A0M Overview

Silicon Controlled Rectifier, 105000mA I(T), 1000V V(DRM)

S18C10A0M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time70 µs
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current500 mA
Maximum leakage current20 mA
On-state non-repetitive peak current2700 A
Maximum on-state current105000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1000 V
surface mountNO
Trigger device typeSCR
Base Number Matches1

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