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NAND01GW4B2CN6E

Description
128M X 8 FLASH 1.8V PROM, 25000 ns, PBGA63
Categorystorage    storage   
File Size1MB,60 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

NAND01GW4B2CN6E Overview

128M X 8 FLASH 1.8V PROM, 25000 ns, PBGA63

NAND01GW4B2CN6E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeTSOP
package instructionTSSOP,
Contacts48
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Is SamacsysN
Maximum access time25000 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density1073741824 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12 mm
Maximum write cycle time (tWC)25 ms
Base Number Matches1
NAND01G-B2B
NAND02G-B2C
1-Gbit, 2-Gbit,
2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
Features
High density NAND flash memories
– Up to 2 Gbits of memory array
– Cost effective solutions for mass storage
applications
NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
– Pinout compatibility for all densities
Supply voltage: 1.8 V/3.0 V
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128 K + 4 K spare) bytes
– x16 device: (64 K + 2 K spare) words
Page read/program
– Random access: 25 µs (max)
– Sequential access: 30 ns (min)
– Page program time: 200 µs (typ)
Copy back program mode
Cache program and cache read modes
Fast block erase: 2 ms (typ)
Status register
Electronic signature
Chip enable ‘don’t care’
TSOP48 12 x 20 mm
FBGA
VFBGA63 9.5 x 12 x 1 mm
VFBGA63 9 x 11 x 1 mm
Serial number option
Data protection
– Hardware block locking
– Hardware program/erase locked during
power transitions
Data integrity
– 100 000 program/erase cycles per block
(with ECC)
– 10 years data retention
ECOPACK
®
packages
Development tools
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
Table 1.
Device summary
Reference
NAND01G-B2B
Part number
NAND01GR3B2B, NAND01GW3B2B
NAND01GR4B2B
,
NAND01GW4B2B
(1)
NAND02GR3B2C, NAND02GW3B2C
NAND02G-B2C
NAND02GR4B2C, NAND02GW4B2C
(1)
1. x16 organization only available for MCP products.
April 2008
Rev 5
1/60
www.numonyx.com
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