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NAND02GW4B2BN1F

Description
128M X 8 FLASH 1.8V PROM, 25000 ns, PBGA63
Categorystorage    storage   
File Size1MB,60 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

NAND02GW4B2BN1F Overview

128M X 8 FLASH 1.8V PROM, 25000 ns, PBGA63

NAND02GW4B2BN1F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeTSOP
package instructionTSOP1,
Contacts48
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time25000 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density2147483648 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count134217728 words
character code128000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12 mm
NAND01G-B2B
NAND02G-B2C
1-Gbit, 2-Gbit,
2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
Features
High density NAND flash memories
– Up to 2 Gbits of memory array
– Cost effective solutions for mass storage
applications
NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
– Pinout compatibility for all densities
Supply voltage: 1.8 V/3.0 V
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128 K + 4 K spare) bytes
– x16 device: (64 K + 2 K spare) words
Page read/program
– Random access: 25 µs (max)
– Sequential access: 30 ns (min)
– Page program time: 200 µs (typ)
Copy back program mode
Cache program and cache read modes
Fast block erase: 2 ms (typ)
Status register
Electronic signature
Chip enable ‘don’t care’
TSOP48 12 x 20 mm
FBGA
VFBGA63 9.5 x 12 x 1 mm
VFBGA63 9 x 11 x 1 mm
Serial number option
Data protection
– Hardware block locking
– Hardware program/erase locked during
power transitions
Data integrity
– 100 000 program/erase cycles per block
(with ECC)
– 10 years data retention
ECOPACK
®
packages
Development tools
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
Table 1.
Device summary
Reference
NAND01G-B2B
Part number
NAND01GR3B2B, NAND01GW3B2B
NAND01GR4B2B
,
NAND01GW4B2B
(1)
NAND02GR3B2C, NAND02GW3B2C
NAND02G-B2C
NAND02GR4B2C, NAND02GW4B2C
(1)
1. x16 organization only available for MCP products.
April 2008
Rev 5
1/60
www.numonyx.com
1

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