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NAND02GW4B2DZA6E

Description
256M X 8 FLASH 1.8V PROM, 25000 ns, PBGA63
Categorystorage    storage   
File Size2MB,69 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

NAND02GW4B2DZA6E Overview

256M X 8 FLASH 1.8V PROM, 25000 ns, PBGA63

NAND02GW4B2DZA6E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA, BGA63,10X12,32
Contacts63
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time25000 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B63
length12 mm
memory density2147483648 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size2K
Number of terminals63
word count134217728 words
character code128000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA63,10X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
page size1K words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.05 mm
Department size64K
Maximum standby current0.00005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeSLC NAND TYPE
width9.5 mm
NAND02G-B2D
2-Gbit, 2112-byte/1056-word page
multiplane architecture, 1.8 V or 3 V, NAND flash memories
Preliminary Data
Features
High density NAND flash memory
– Up to 2 Gbits of memory array
– Cost-effective solution for mass storage
applications
NAND interface
– x8 or x16 bus width
– Multiplexed address/data
Supply voltage: 1.8 V or 3.0 V device
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128 K + 4 K spare) bytes
– x16 device: (64 K + 2 K spare) words
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic EDC (error
detection code)
Cache read mode
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks): 1.5 ms
(typ)
TSOP48 12 x 20 mm (N)
FBGA
VFBGA63 9.5 x 12 mm (ZA)
Status register
Electronic signature
Chip Enable ‘don’t care’
Serial number option
Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
ONFI 1.0 compliant command set
Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
ECOPACK
®
packages
Device summary
Part number
NAND02GR3B2D
NAND02G-B2D
NAND02GW3B2D
NAND02GR4B2D
(1)
NAND02GW4B2D
(1)
Table 1.
Reference
1. x 16 organization only available for MCP products.
April 2008
Rev 3
1/69
www.numonyx.com
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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