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NAND04GW3B2DN1E

Description
512M X 8 FLASH 3V PROM, 25000 ns, PDSO48
Categorystorage    storage   
File Size2MB,69 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

NAND04GW3B2DN1E Overview

512M X 8 FLASH 3V PROM, 25000 ns, PDSO48

NAND04GW3B2DN1E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeTSOP
package instructionTSSOP, TSSOP48,.8,20
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time25000 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
length18.4 mm
memory density4294967296 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size4K
Number of terminals48
word count536870912 words
character code512000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size2K words
Parallel/SerialPARALLEL
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size128K
Maximum standby current0.00005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
switch bitNO
typeSLC NAND TYPE
width12 mm
NAND04G-B2D, NAND08G-BxC
4 Gbit, 8 Gbit, 2112 byte/1056 word page
multiplane architecture, 1.8 V or 3 V, NAND Flash memories
Preliminary Data
Features
High density NAND Flash Memory
– Up to 8 Gbit memory array
– Cost-effective solution for mass storage
applications
NAND interface
– x8 or 16x bus width
– Multiplexed address/data
Supply voltage: 1.8 V or 3.0 V device
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128K + 4 K spare) bytes
– x16 device: (64K + 2 K spare) words
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic error
detection code (EDC)
Cache read mode
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks):
1.5 ms (typ)
Status Register
Electronic signature
Chip Enable ‘don’t care’
Serial number option
NAND08G-BxC
TSOP48 12 x 20 mm (N)
LGA
LGA52 12 x 17 mm (ZL)
r
Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
ONFI 1.0 compliant command set
Data integrity
– 100 000 program/erase cycles (with ECC
(error correction code))
– 10 years data retention
ECOPACK
®
packages
Device Summary
Part number
NAND04GR3B2D
Table 1.
Reference
NAND04G-B2D
NAND04GW3B2D
NAND04GR4B2D
(1)
NAND04GW4B2D
(1)
NAND08GR3B2C,
NAND08GW3B2C
NAND08GR4B2C
(1)
NAND08GW4B2C
(1)
NAND08GR3B4C
NAND08GW3B4C
1. x16 organization only available for MCP products.
December 2007
Rev 3
1/69
www.numonyx.com
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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