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NAND512R4A2CZA6F

Description
64M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63
Categorystorage    storage   
File Size1MB,51 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

NAND512R4A2CZA6F Overview

64M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63

NAND512R4A2CZA6F Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA,
Contacts63
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time15000 ns
JESD-30 codeR-PBGA-B63
length11 mm
memory density536870912 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals63
word count33554432 words
character code32000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.05 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
typeSLC NAND TYPE
width9 mm
NAND512R3A2C NAND512R4A2C
NAND512W3A2C NAND512W4A2C
512 Mbit, 528 byte/264 word page,
1.8 V/3 V, NAND Flash memories
Features
High density NAND Flash memories
512 Mbit memory array
Cost effective solutions for mass
storage applications
x 8 or x 16 bus width
Multiplexed Address/ Data
FBGA
NAND interface
TSOP48 12 x 20 mm
Supply voltage: 1.8 V, 3.0 V
Page size
x 8 device: (512 + 16 spare) bytes
x 16 device: (256 + 8 spare) words
x 8 device: (16 K + 512 spare) bytes
x 16 device: (8 K + 256 spare) words
Random access:
12 µs (3 V)/15 µs (1.8 V) (max)
Sequential access:
30 ns (3 V)/50 ns (1.8 V) (min)
Page Program time: 200 µs (typ)
Block size
VFBGA55 8 x 10 x 1 mm
VFBGA63 9 x 11 x 1 mm
Hardware Data Protection
Program/Erase locked during Power
transitions
100,000 Program/Erase cycles (with
ECC)
10 years Data Retention
Page Read/Program
Data integrity
Copy Back Program mode
Fast Block Erase: 2 ms (typ)
Status Register
Electronic signature
Chip Enable ‘don’t care’
Serial Number option
Device summary
Reference
ECOPACK
®
packages
Development tools
Error Correction Code models
Bad Blocks Management and Wear
Leveling algorithms
Hardware simulation models
Table 1.
Part number
NAND512R3A2C
NAND512R4A2C
(1)
NAND512-A2C
NAND512W3A2C
NAND512W4A2C
(1)
1. x16 organization only available for MCP.
January 2008
Rev 2
1/51
www.numonyx.com
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