NBB-410 datasheet, PDF - EEWORLD Datasheet

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NBB-410: Description0 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER; CategoryTopical application Wireless rf/communication; File Size42KB，4 Pages; ManufacturerRF Micro Devices (Qorvo)

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NBB-410 Overview

0 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

NBB-410 Parametric

Parameter Name	Attribute value
Maximum operating temperature	85 Cel
Minimum operating temperature	-45 Cel
Maximum input power	20 dBm
Maximum operating frequency	8000 MHz
Minimum operating frequency	0.0 MHz
Processing package description	GREEN, CERAMIC, MICRO-X, 4 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
Maximum voltage standing wave ratio	1.9
structure	COMPONENT
terminal coating	MATTE TIN
Impedance characteristics	50 ohm
Microwave RF Type	WIDE BAND LOW POWER

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AN0014

Bias Scheme for NBB-Series Amplifiers

Introduction

RFMD’s NBB-series amplifiers are monolithic integrated circuits (IC's) using InGaP/GaAs HBT technology. The

NBB-series uses a Darlington-pair transistor configuration with bias and feedback resistors properly selected to deter-

mine the gain, input and output match and bias (both voltage and current) parameters. A schematic representation of the

NBB-series amplifier is shown in Figure 1.

NBB-Series

Amplifier

BIAS

Figure 1. Schematic representation of Darlington-pair feedback amplifier used in the NBB-series amplifiers.

(On-chip components are shown inside the dotted outline.)

The amplifier may be analyzed as a two-port network with the input (left) and output (right) as shown in Figure 1. The

output node is also used to provide bias to the amplifier through the bias network (top), which is shown in the figure. The

packaged part has a total of four ports: input, output and bias, and two ground connections for minimization of ground

inductance.

Bias Circuit Topology

The input voltage of the amplifier is fixed by the base-emitter voltage of Q

and Q

, and the output voltage is determined

by the voltage divider established by R

and R

. Hence, the output voltage is a designed parameter and the amplifier is

controlled by the current supplied to the output node. Thus, the amplifier is biased using a current source rather than a

voltage source. The simplest current source is a resistor (R

) connected to a voltage source (V

) as shown in

Figure2.

The current source, comprising voltage source V

and resistor R

BIAS

, should be selected such that the designed ampli-

fier voltage (V

) appears at the output with the desired current (I

) flowing into the amplifier. The governing relationship

for the bias circuit shown in Figure 2 is:

(

–

)

= ---------------------------

BIAS

Eq. 1

The recommended amplifier current (I

) and design value of the amplifier voltage (V

) for each NBB-series amplifier is

specified on the data sheet. Hence, if a V

is selected, then the desired R

may be calculated from Equation 1. A bias

resistor table is provided with each datasheet which is calculated using this method.

15-23

TECHNICAL NOTES

AND ARTICLES

NBB-410 Related Products

	NBB-410	NBB-301	NBB-401
Description	0 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Maximum operating temperature	85 Cel	85 Cel	85 Cel
Minimum operating temperature	-45 Cel	-45 Cel	-45 Cel
Maximum input power	20 dBm	20 dBm	20 dBm
Maximum operating frequency	8000 MHz	8000 MHz	8000 MHz
Minimum operating frequency	0.0 MHz	0.0 MHz	0.0 MHz
Processing package description	GREEN, CERAMIC, MICRO-X, 4 PIN	GREEN, CERAMIC, MICRO-X, 4 PIN	GREEN, CERAMIC, MICRO-X, 4 PIN
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE
Maximum voltage standing wave ratio	1.9	1.9	1.9
structure	COMPONENT	COMPONENT	COMPONENT
terminal coating	MATTE TIN	MATTE TIN	MATTE TIN
Impedance characteristics	50 ohm	50 ohm	50 ohm
Microwave RF Type	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER

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