NPMC Series
Ultra Low Capacitance
TSPD
The NPMC series of Low Capacitance Thyristor Surge Protection
Devices (TSPD) protect sensitive electronic equipment from transient
overvoltage conditions. Due to their ultra low off−state capacitance
(C
o
), they offer minimal signal distortion for high speed equipment
such as DSL and T1/E1 circuits. The low nominal offstate capacitance
translates into the extremely low differential capacitance offering
superb linearity with applied voltage or frequency.
The NPMC Series helps designers to comply with the various
regulatory standards and recommendations including:
GR−1089−CORE, IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,
TIA−968−A, FCC Part 68, EN 60950, UL 1950.
Features
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ULTRA LOW CAPACITANCE
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64
−
350 VOLTS
•
•
•
•
•
•
Ultra Low
−
Micro Capacitance
Low Leakage (Transparent)
High Surge Current Capabilities
Precise Turn on Voltages
Low Voltage Overshoot
These are Pb−Free Devices
T
R
Typical Applications
•
xDSL Central Office and Customer Premise
•
T1/E1
•
Other Broadband High Speed Data Transmission Equipment
ELECTRICAL PARAMETERS
V
DRM
Device
NP0640SxMCT3G
NP0720SxMCT3G
NP0900SxMCT3G
NP1100SxMCT3G
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
NP3500SxMCT3G
V
58
65
75
90
120
140
170
180
190
220
275
320
V
(BO)
V
77
88
98
130
160
180
220
240
260
300
350
400
V
T
V
4
4
4
4
4
4
4
4
4
4
4
4
I
DRM
mA
5
5
5
5
5
5
5
5
5
5
5
5
I
(BO)
mA
800
800
800
800
800
800
800
800
800
800
800
800
I
T
A
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
I
H
mA
150
150
150
150
150
150
150
150
150
150
150
150
A
Y
WW
xxxx
SMB
JEDEC DO−214AA
CASE 403C
MARKING DIAGRAM
AYWW
xxxxMG
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
(NPxxx0SxMC)
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NPxxx0SxMCT3G
Package
SMB
(Pb−Free)
Shipping
†
2500 Tape &
Reel
G = indicates leadfree, RoHS compliant
*
Recognized Components
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2010
December, 2010
−
Rev. 2
1
Publication Order Number:
NP0640SAMC/D
NPMC Series
TEL−COM STANDARDS
Waveform
Specification
GR−1089−CORE
TIA−968−A
GR−1089−CORE
TIA−968−A
ITU−T K.20/21
GR−1089−CORE
Voltage
(ms)
2x10
10x160
10x360
10x560
10x700
10x1000
Current
(ms)
2x10
10x160
10x360
10x560
5x310
10x1000
x = series ratings
A
150
90
75
50
75
50
B
250
150
125
100
100
80
C
500
200
175
150
200
100
Unit
A(pk)
SURGE RATINGS
Characteristics
Nominal Pulse
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 1, 2 and 3)
2 x 10
mSec
8 x 20
mSec
10 x 160
mSec
10 x 360
mSec
10 x 560
mSec
10 x 700
mSec
10 x 1000
mSec
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
3. Nominal values may not represent the maximum capability of a device.
Symbol
A
B
C
Unit
A(pk)
I
PPS1
I
PPS2
I
PPS3
I
PPS4
I
PPS5
I
PPS6
I
PPS7
150
150
90
75
50
75
50
250
250
150
125
100
100
80
500
400
200
150
150
200
100
CAPACITANCE
Max
Characteristics
(f=1.0 MHz, 1.0 V
rms
, 2 Vdc bias)
(C
o
Apx 45% @ 50 V)
NP0640SxMCT3G
NP0720SxMCT3G
NP0900SxMCT3G
NP1100SxMCT3G
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
NP3500SxMCT3G
Symbol
C
o
A
23
23
23
23
23
23
23
23
23
23
23
23
B
29
29
29
29
29
29
29
29
29
29
29
29
C
33
33
33
33
33
33
33
33
33
33
33
33
Unit
pF
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Symbol
V
DRM
Rating
Repetitive peak off−state voltage: Rated maximum
(peak) continuous voltage that may be applied in the
off−state conditions including all dc and repetitive
alternating voltage components.
NP0640SxMCT3G
NP0720SxMCT3G
NP0900SxMCT3G
NP1100SxMCT3G
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
(Stresses exceeding Maximum Ratings may damage
the device. Maximum Ratings are stress ratings only.
Functional operation above the Recommended
Operating Conditions is not implied. Extended
exposure to stresses above the Recommended
Operating Conditions may affect device reliability.)
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
NP3500SxMCT3G
Value
±58
±65
±75
±90
±120
±140
±170
±180
±190
±220
±275
±320
Unit
V
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2
NPMC Series
ELECTRICAL CHARACTERISTICS TABLE
(T
A
= 25°C unless otherwise noted)
Symbol
V
(BO)
Rating
Breakover voltage: The maximum voltage across the device in or at the
breakdown region. (Note 4)
VDC = 1000 V, dv/dt = 100 V/ms
NP0640SxMCT3G
NP0720SxMCT3G
NP0900SxMCT3G
NP1100SxMCT3G
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
NP3500SxMCT3G
I
(BO)
I
H
I
DRM
V
T
di/dt
Breakover Current: The instantaneous current flowing at the breakover voltage.
Holding Current: Minimum current required to maintain the device in the on−state. (Notes 5, 6)
Off−state Current: The dc value of current that results from the applica-
tion of the off−state voltage
V
D
= 50 V
V
D
= V
DRM
150
2
5
4
±500
V
A/ms
Min
Typ
Max
±77
±88
±98
±130
±160
±180
±220
±240
±260
±300
±350
±400
800
mA
mA
mA
Unit
V
On−state Voltage: The voltage across the device in the on−state condition.
I
T
= 2.2 A (pk), PW = 300
ms,
DC = 2%
Critical rate of rise of on−state current: rated value of the rate of rise of current which the device
can withstand without damage.
4. Electrical parameters are based on pulsed test methods.
5. Measured under pulsed conditions to reduce heating
6. Allow cooling before testing second polarity.
THERMAL CHARACTERISTICS
Symbol
T
STG
T
J
R
0JA
Storage Temperature Range
Junction Temperature
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
Rating
Value
−65
to +150
−40
to +150
90
Unit
°C
°C
°C/W
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3
NPMC Series
Detailed Operating Description
The TSPD or Thyristor Surge Protection Device are
specialized silicon based overvoltage protectors, used to
protect sensitive electronic circuits from damaging
overvoltage transient surges caused by induced lightning
and powercross conditions.
The TSPD protects by switching to a low on state voltage
when the specified protection voltage is exceeded. This is
known as a “crowbar” effect. When an overvoltage occurs,
the crowbar device changes from a high−impedance to a
low−impedance state. This low−impedance state then offers
a path to ground, shunting unwanted surges away from the
sensitive circuits.
This crowbar action defines the TSPD’s two states of
functionality: Open Circuit and Short Circuit.
Open Circuit – The TSPD must remain transparent during
normal circuit operation. The device looks like an open
across the two wire line.
Short Circuit – When a transient surge fault exceeds the
TSPD protection voltage threshold, the devices switches on,
and shorts the transient to ground, safely protecting the
circuit.
+
I
(OP)
+
Protected
Equipment
−
•TSPD
looks like an open
•Circuit
operates normally
Transient Surge
Equipment Failure Threshold
TSPD Protection Voltage
Upper Limit
Normal System
Operating Voltage
TSPD Transparent
(open)
TSPD Protection
(short)
TSPD Transparent
(open)
Volts
Time
Figure 6. Protection During a Transient Surge
TSPD’s are useful in helping designers meet safety and
regulatory standards in Telecom equipment including
GR−1089−CORE, ITU−K.20, ITU−K.21, ITU−K.45, FCC
Part 68, UL1950, and EN 60950.
ON Semiconductor offers a full range of these products in
the NP series product line.
DEVICE SELECTION
V
(OP)
TSPD
−
When selecting a TSPD use the following key selection
parameters.
Off−State Voltage V
DRM
Normal Circuit Operation
+
−
I
(Fault)
V
(Fault)
TSPD
+
I
(Fault)
Protected
Equipment
−
Operation during a Fault
•Fault
voltage greater than V
bo
occurs
•TSPD
shorts fault to ground
•After
short duration events the O/V
switches back to an open condition
•Worst
case (Fail/Safe)
•O/V
permanent short
•Equipment
protected
Choose a TSPD that has an Off−State Voltage greater than
the normal system operating voltage. The protector should
not operate under these conditions:
Example:
Vbat = 48 Vmax
Vring = 150 Vrms = 150*1.414 = 212 V peak
Figure 5. Normal and Fault Conditions
The electrical characteristics of the TSPD help the user to
define the protection threshold for the circuit. During the
open circuit condition the device must remain transparent;
this is defined by the I
DRM
. The I
DRM
should be as low as
possible. The typical value is less than 5
mA.
The circuit operating voltage and protection voltage must
be understood and considered during circuit design. The
V
(BO)
is the guaranteed maximum voltage that the protected
circuit will see, this is also known as the protection voltage.
The V
DRM
is the guaranteed maximum voltage that will
keep the TSPD in its normal open circuit state. The TSPD
V
(BO)
is typically a 20−30% higher than the V
DRM
. Based
on these characteristics it is critical to choose devices which
have a V
DRM
higher than the normal circuit operating
voltage, and a V
(BO)
which is less than the failure threshold
of the protected equipment circuit. A low on−state voltage
V
t
allows the TSPD to conduct large amounts of surge
current (500 A) in a small package size.
Once a transient surge has passed and the operating
voltage and currents have dropped to their normal level the
TSPD changes back to its open circuit state.
V
DRM
should be greater than the peak value of these two
components:
V
DRM
> 212 + 48 = 260 V
DRM
Breakover Voltage V
(BO)
Verify that the TSPD Breakover Voltage is a value less
than the peak voltage rating of the circuit it is protecting.
Example: Relay breakdown voltage, SLIC maximum
voltage, or coupling capacitor maximum rated voltage.
Peak Pulse Current Ipps
Choose a Peak Pulse current value which will exceed the
anticipated surge currents in testing. In some cases the 100 A
“C” series device may be needed when little or no series
resistance is used. When a series current limiter is used in the
circuit a lower current level of “A” or “B” may be used. To
determine the peak current divide the maximum surge
current by the series resistance.
Hold Current (I
H
)
The Hold Current must be greater than the maximum
system generated current. If it is not then the TSPD will
remain in a shorted condition, even after a transient event
has passed.
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