NTD4856N, NVD4856N
Power MOSFET
Features
25 V, 89 A, Single N−Channel, DPAK/IPAK
•
•
•
•
•
Trench Technology
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Applications
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V
(BR)DSS
25 V
R
DS(ON)
MAX
4.7 mW @ 10 V
6.8 mW @ 4.5 V
D
I
D
MAX
89 A
•
VCORE Applications
•
DC−DC Converters
•
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
ID
Symbol
V
DSS
V
GS
I
D
Value
25
±20
16.8
13.0
2.14
13.3
10.3
1.33
89
69
60
179
45
−55
to
+175
50
6
180.5
W
A
A
°C
A
V/ns
mJ
W
A
4
Drain
W
A
Unit
V
V
A
1 2
3
N−Channel
G
S
4
4
1
1
2
4
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
2 3
3 IPAK
CASE 369AC
(Straight Lead)
3
IPAK
CASE 369D
(Straight Lead
DPAK) STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
AYWW
48
56NG
4
Drain
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
2
1 2 3
Drain 3
1
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
A
Y
WW
4856N
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 19 A
pk
, L = 1.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
* The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
AYWW
48
56NG
ORDERING INFORMATION
©
Semiconductor Components Industries, LLC, 2014
April, 2017
−
Rev. 4
1
Publication Order Number:
NTD4856N/D
AYWW
48
56NG
NTD4856N, NVD4856N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJC−TAB
R
qJA
R
qJA
Value
2.5
3.5
70
113
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 10 V, V
DS
= 15 V, I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
15.7
22.5
18.6
7.5
ns
2241
567
279
18
3.4
6.7
6.6
38
nC
27
nC
pF
I
D
= 30 A
I
D
= 30 A
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
25
23
1.0
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.45
5.9
3.9
5.3
73
2.5
V
mV/°C
4.7
6.8
mW
S
V
DS
= 1.5 V, I
D
= 15 A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD4856N, NVD4856N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified) (continued)
Parameter
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.87
0.72
18.7
9.3
9.4
8.0
nC
ns
1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
8.7
17.5
27.2
4.0
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
2.49
0.0164
1.88
3.46
0.6
nH
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTD4856N, NVD4856N
TYPICAL PERFORMANCE CURVES
100
I
D
, DRAIN CURRENT (AMPS)
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4
2.8 V
2.6 V
5
3.2 V
3.4 V
130
120
110
100
90
80
70
60
50
40
30
20
10
0
10 V
3.6 V
I
D
, DRAIN CURRENT (AMPS)
4V
3.8 V
4.2 V
T
J
= 25°C
V
DS
≥
10 V
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
0
1
2
3
4
5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.04
I
D
= 30 A
T
J
= 25°C
0.03
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.008
0.0075
0.007
0.0065
0.006
0.0055
0.005
0.0045
0.004
0.0035
0.003
0.0025
0.002
20
30
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
0.02
V
GS
= 11.5 V
0.01
0
2
4
6
8
10
40
50
60
70
80
90
100
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
100
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
−25
0
25
50
75
100
125
150
175
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
NTD4856N, NVD4856N
TYPICAL PERFORMANCE CURVES
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
12
10
8
6
4
2
0
0
Q
1
Q
2
I
D
= 30 A
T
J
= 25°C
4
8
12
16
20
24
28
32
36
40
Q
G
, TOTAL GATE CHARGE (nC)
V
GS
Q
T
V
GS
= 0 V
C
iss
T
J
= 25°C
C
oss
C
rss
5
10
15
20
25
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
IS, SOURCE CURRENT (AMPS)
1000
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
t
d(on)
V
GS
= 0 V
25
20
15
10
5
0
0.2
T
J
= 25°C
10
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0.4
0.6
0.8
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
I D, DRAIN CURRENT (AMPS)
200
180
160
140
120
100
80
60
40
20
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 19 A
100
10
ms
100
ms
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
1 ms
10 ms
dc
1
0.1
0.1
100
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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