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DB-960-70W

Description
925MHz - 960MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
CategoryWireless rf/communication    Radio frequency and microwave   
File Size304KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

DB-960-70W Overview

925MHz - 960MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

DB-960-70W Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codecompliant
structureMODULE
Gain12.5 dB
Maximum operating frequency960 MHz
Minimum operating frequency925 MHz
Maximum operating temperature85 °C
Minimum operating temperature-20 °C
RF/Microwave Device TypesNARROW BAND HIGH POWER
Maximum voltage standing wave ratio10
Base Number Matches1
DB-960-70W
70W / 26V / 925-960 MHz PA using 2x PD57045S
The
LdmosST
FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 70 W min. with 13 dB gain over 925-960
MHz
10:1 LOAD VSWR CAPABILITY
BeO FREE AMPLIFIER.
DESCRIPTION
The DB-960-70W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for GSM & E-GSM base station
applications.
The DB-960-70W is designed in cooperation with
Européenne
de
Télécommunications
S.A
(www.etsa.fr), for high gain and broadband
performance operating in common source mode
at 26 V, capable of withstanding load mismatch up
to 10:1 all phases and with harmonics lower than
30 dBc.
ORDER CODE
DB-960-70W
MECHANICAL SPECIFICATION
L=80 mm W=50 mm H=10 mm
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
o
C)
Symbol
V
DD
I
D
P
DISS
T
CASE
P
amb
Supply voltage
Drain Current
Power Dissipation
Operating Case Temperature
Max. Ambient Temperature
Parameter
Value
32
9
135
-20 to +85
+55
Unit
V
A
W
o
o
C
C
November, 20 2002
1/5
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