INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 300V(Min)- D44TD3
= 350V(Min)- D44TD4
= 400V(Min)- D44TD5
·High
Switching Speed
·Low
Saturation Voltage
APPLICATIONS
·Designed
for switching regulators, high resolution deflection
circuits, inverters and motor drivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
D44TD3
V
CEV
Collector-Emitter
Voltage
D44TD4
D44TD5
D44TD3
V
CEO
Collector-Emitter
Voltage
D44TD4
D44TD5
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
400
500
600
300
350
400
5
4
8
50
150
-65~150
V
A
A
W
℃
℃
V
V
UNIT
D44TD3/4/5
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.56
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
D44TD3
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
D44TD4
D44TD5
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
D44TD3
I
CEV
Collector
Cutoff Current
D44TD4
D44TD5
I
EBO
h
FE
Emitter Cutoff Current
DC Current Gain
I
C
= 2A; I
B
= 0.4A
B
D44TD3/4/5
CONDITIONS
MIN
300
MAX
UNIT
I
C
= 0.1A ;I
B
= 0
B
350
400
1.0
1.5
0.1
0.1
0.1
1.0
5
V
V
V
I
C
= 2A; I
B
= 0.4A
B
V
CE
= 400V;V
BE(
off
)
= 1.5V
V
CE
= 500V;V
BE(
off
)
= 1.5V
V
CE
= 600V;V
BE(
off
)
= 1.5V
V
EB
= 6V; I
C
=0
I
C
= 2A ; V
CE
= 3V
mA
mA
isc Website：www.iscsemi.cn
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