DU1230V datasheet, PDF - EEWORLD Datasheet

DU1230V: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size86KB，1 Pages; ManufacturerMACOM; Websitehttp://www.macom.com

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DU1230V Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	8 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
surface mount	NO
Base Number Matches	1

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