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DV2880U

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size461KB,5 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric View All

DV2880U Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

DV2880U Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)160 W
surface mountNO
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