D882B
D882B Silicon NPN Epitaxial Transistor
Description :The D882B is designed for use in output stage of 1w audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Features:
●Excellent
h
FE
Linearity
●Complementary
to B772B
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Front Metal
Backside Metal
Scribe line width
Wafer Size
Base
1100um×1100um
210±20um
240um×240um
Emitter 330um×260um
Al
Au（As）/TiNiAg
60um
6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector Saturation Voltage
Symbol
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
h
FE
V
CE
(sat)
Test Condition
V
CB
=35V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=0.1mA
I
C
=1mA
I
E
=0.1mA
V
CE
=2V, I
C
=1A
I
C
=2A, I
B
=200mA
40
30
5.0
100
400
0.5
V
Min
Max
0.1
0.1
Unit
uA
uA
V
V
V
May.2004
Version :0.0
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