D758N datasheet, PDF - EEWORLD Datasheet

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D758N: DescriptionRectifier Diode, 1 Phase, 1 Element, 760A, 200V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size56KB，2 Pages; ManufacturerEUPEC [eupec GmbH]

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D758N Overview

Rectifier Diode, 1 Phase, 1 Element, 760A, 200V V(RRM), Silicon,

D758N Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
application	POWER
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-XEDB-N2
Maximum non-repetitive peak forward current	8800 A
Number of components	1
Phase	1
Number of terminals	2
Maximum output current	760 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Base Number Matches	1

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kuka-2003-inhalt.qxd

17.04.2003

10:34 Uhr

Seite 45

Overview Rectifier in Disc Housings

V

RRM

– Concept

9000 V

6500 V

5800 V

4800 V 1500 V

RMS

4600 V

4500 V

4400 V

4000 V

3600 V 1000 V

RMS

3400 V

3200 V

2800 V

2600 V

2400 V

2200 V 690 V

RMS

2000 V

1800 V

1600 V

1400 V 500 V

RMS

1200 V

800 V

400 V

Pellet

Ø

Case

Ø

17 mm

21 mm

41 mm

30 mm

50 mm

38 mm

57/60 mm

46 mm

75 mm

D448N

D758N

D2228N

D4457N

D5807N

D5809N

56 mm

65 mm

100 mm

75/80 mm

120 mm

D8019N

Epoxy-Discs

D428N

D798N

D1049N

D660N

D748N

D1029N

D1709N

D2209N

D2200N

D2659N

D4201N

D4709N

Epoxy Disc

D471N

D711N

D1481N

D2601NH

D2601N

D3001N

D749N

Ceramic Disc

D1800N

D1809N

D2201N

D1069N

D3501N

D849N

D269N

High Power-Discs

45

IGBT

SCR / Diode Modules

Presspacks

Stacks

Outlines

Accessories

Explanations

D758N Related Products

	D758N	D4457N	D1049N	D1481N	D1809N	D711N	D849N	D2659N	D798N
Description	Rectifier Diode, 1 Phase, 1 Element, 760A, 200V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 4460A, 200V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 1650A, 800V V(RRM), Silicon,	Rectifier Diode,	Rectifier Diode, 1 Phase, 1 Element, 2450A, 3200V V(RRM), Silicon,	Rectifier Diode,	Rectifier Diode, 1 Phase, 1 Element, 1140A, 2800V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 3000A, 2000V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 1050A, 800V V(RRM), Silicon,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
application	POWER	POWER	POWER	-	POWER	-	POWER	POWER	POWER
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE	-	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	-	SILICON	-	SILICON	SILICON	SILICON
JESD-30 code	O-XEDB-N2	O-XEDB-N2	O-XEDB-N2	-	O-XEDB-N2	-	O-XEDB-N2	O-XEDB-N2	O-XEDB-N2
Maximum non-repetitive peak forward current	8800 A	52000 A	18500 A	-	27500 A	-	12800 A	33500 A	11800 A
Number of components	1	1	1	-	1	-	1	1	1
Phase	1	1	1	-	1	-	1	1	1
Number of terminals	2	2	2	-	2	-	2	2	2
Maximum output current	760 A	4460 A	1650 A	-	2450 A	-	1140 A	3000 A	1050 A
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND	ROUND	-	ROUND	-	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	-	DISK BUTTON	-	DISK BUTTON	DISK BUTTON	DISK BUTTON
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	200 V	800 V	-	3200 V	-	2800 V	2000 V	800 V
surface mount	YES	YES	YES	-	YES	-	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	-	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	-	END	-	END	END	END
Base Number Matches	1	1	1	1	1	1	-	-	-

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