D2084UK datasheet, PDF - EEWORLD Datasheet

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D2084UK: DescriptionRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-5; CategoryDiscrete semiconductor The transistor; File Size17KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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D2084UK Overview

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-5

D2084UK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	ROHS COMPLIANT PACKAGE-5
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F4
JESD-609 code	e4
Number of components	2
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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D2084UK

ROHS COMPLIANT

MECHANICAL DATA

TetraFET

100W – 28V – 900MHz

B

G

(typ)

C

(2 pls)

2

1

H

D

3

P

(2 pls) A

5

4

E

(4 pls)

F

I

DIM

A

B

C

D

E

F

G

H

I

J

K

M

N

O

P

PIN 1

mm

19.05

10.77

45°

9.78

5.71

27.94

1.52R

10.16

22.22

0.13

2.72

1.70

5.08

34.03

1.61R

Tol.

0.50

0.13

5°

0.13

MAX

0.02

0.13

0.50

0.13

0.08

Inches

0.75

0.424

45°

0.385

0.225

1.100

0.060R

0.400

0.875

0.005

0.107

0.067

0.200

1.340

0.064R

Tol.

0.020

0.005

5°

0.005

MAX

0.001

0.005

0.020

0.005

0.003

DRAIN 1

GATE 2

SOURCE (COMMON)

DRAIN 2

GATE 1

PIN 2

PIN 4

N

M

O

J

K

PIN 3

PIN 5

ELECTRICAL CHARACTERISTICS

(T

case

= 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

PER SIDE

BV

DSS

I

DSS

I

GSS

V

GS(th)

g

m

C

iss

C

oss

C

rss

V

GS(th)match

Drain–Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Leakage Current

Gate Threshold Voltage

*

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Threshold Matching Voltage

Between Sides

P

O

= 100W

f = 900MHz

V = 28V

I = 100mA

V = 28V

V = 20V

I = 10mA

V = 10V

T = 300

m

S

V

DS

= 0V

V = 28V

I

D

= 10mA

V

DS

= V

GS

V

GS

= -5V

I = 3A

1

65

Typ.

Max. Unit

V

4

1

7

mA

m

A

V

mhos

pF

3.2

170

68

3.6

0.1

V

TOTAL DEVICE

I

DQ

= 3A

Thermal Resistance = 0.6 °C / W

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly

toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

Document Number 2603

Issue 1

D2084UK Related Products

	D2084UK	D2084UKG4
Description	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-5	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-5
Is it Rohs certified?	conform to	conform to
package instruction	ROHS COMPLIANT PACKAGE-5	ROHS COMPLIANT PACKAGE-5
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	COMMON SOURCE, 2 ELEMENTS	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	65 V	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F4	R-CDFM-F4
JESD-609 code	e4	e4
Number of components	2	2
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	GOLD	GOLD
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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