Semiconductor
DN030E
NPN Silicon Transistor
Features
•
Extremely low collector-to-emitter saturation voltage
( V
CE(SAT)
= 0.1V Typ. @I
C
/I
B
=100mA/10mA)
•
Suitable for low voltage large current drivers
•
Complementary pair with DP030E
•
Switching Application
Ordering Information
Type NO.
DN030E
Marking
N01
Package Code
SOT-523F
Outline Dimensions
unit :
mm
1.60±0.1
0.88±0.1
1.60±0.1
1.00±0.1
1
3
2
0.25~0.30
0.68
-0.05
+0.1
KST-4009-000
1.11±0.05
PIN Connections
1. Base
2. Emitter
3. Collector
0~0.1
1
DN030E
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25° C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
12
5
300
150
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
(Ta=25° C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat1)
V
CE(sat2)
V
BE(sat 1)
V
BE(sat2)
f
T
C
ob
Test Condition
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=12V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
I
C
=100mA, I
B
=10mA
I
C
=300mA, I
B
=30mA
I
C
=100mA, I
B
=10mA
I
C
=300mA, I
B
=30mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
Min.
15
12
5
-
-
200
70
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
300
3
Max.
-
-
-
0.1
0.1
450
-
0.2
0.5
1.2
1.7
-
-
Unit
V
V
V
µA
µA
-
-
V
V
V
V
MHz
PF
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
KST-4009-000
2
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