000000000
Semiconductor
DN200P
NPN Silicon Transistor
Features
•
Extremely low collector-to-emitter saturation voltage
( V
CE(SAT)
= 0.3V Typ. @I
C
/I
B
=1A/50mA)
•
Suitable for low voltage large current drivers
•
Complementary pair with DP200P
•
Switching Application
Ordering Information
Type NO.
DN200P
Marking
N04□
Package Code
SOT-223
Outline Dimensions
unit :
mm
PIN Connections
1. Base
2. Collector
3. Emitter
KST-7004-000
1
DN200P
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25° C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
12
5
2
1.1
150
-55~150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25° C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
f
T
C
ob
Test Condition
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=12V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=2A
I
C
=1A, I
B
=50mA
I
C
=2A, I
B
=50mA
I
C
=-1A, I
B
=-50mA
V
CE
=5V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
Min.
15
12
5
-
-
200
40
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
260
5
Max.
-
-
-
0.1
0.1
450
-
0.3
0.5
-1.2
-
-
Unit
V
V
V
µA
µA
-
-
V
V
MHz
pF
* : h
FE
rank / O : 120 ~ 240, Y : 200 ~ 400, G : 350 ~ 700
KST-7004-000
2
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