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DN200PO

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size53KB,3 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet Parametric Compare View All

DN200PO Overview

Transistor,

DN200PO Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.1 W
surface mountYES
Base Number Matches1
000000000
Semiconductor
DN200P
NPN Silicon Transistor
Features
Extremely low collector-to-emitter saturation voltage
( V
CE(SAT)
= 0.3V Typ. @I
C
/I
B
=1A/50mA)
Suitable for low voltage large current drivers
Complementary pair with DP200P
Switching Application
Ordering Information
Type NO.
DN200P
Marking
N04□
Package Code
SOT-223
Outline Dimensions
unit :
mm
PIN Connections
1. Base
2. Collector
3. Emitter
KST-7004-000
1

DN200PO Related Products

DN200PO DN200PY DN200PG
Description Transistor, Transistor, Transistor,
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 2 A 2 A 2 A
Configuration Single Single Single
Minimum DC current gain (hFE) 120 200 350
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 1.1 W 1.1 W 1.1 W
surface mount YES YES YES
Base Number Matches 1 1 1
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