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DN200F

Description
TRANSISTOR,BJT,NPN,12V V(BR)CEO,2A I(C),SOT-89
CategoryDiscrete semiconductor    The transistor   
File Size281KB,5 Pages
ManufacturerKODENSHI AUK
Websitehttp://auk.co.kr/
Download Datasheet Parametric View All

DN200F Overview

TRANSISTOR,BJT,NPN,12V V(BR)CEO,2A I(C),SOT-89

DN200F Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)40
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
surface mountYES
Base Number Matches1
DN200F
NPN Silicon Transistor
Features
Extremely low collector-to-emitter
saturation voltage
( V
CE(SAT)
= 0.2V Typ. @I
C
/I
B
=1A/50
㎃)
Suitable for low voltage large current drivers
Complementary pair with DP200F
Switching Application
PIN Connection
SOT-89
Ordering Information
Type NO.
DN200F
04: DEVICE CODE,
Marking
N04
YWW
Package Code
SOT-89
YWW(Y : Year code, WW : Weekly code)
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
P
C
**
T
J
T
stg
Ratings
15
12
5
2
4
0.5
1
150
-55~150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300
** : When mounted on ceramic substrate(250
㎟×0.8t)
KSD-T5B010-001
1

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